Detailed Information
Name TANAKA, Tooru
Department Graduate School of Science and Engineering Electrical and Electronic Engineering  Electrical and Electronic Engineering
Job Title Associate Professor Degree Obtained Doctor (Engineering)(2000/03)
Master (Engineering)(1997/03)
E-mail
Homepage http://www.sc.ec.saga-u.ac.jp/en/
Research Field/Keywords for 
Research Field
semiconductor physics and devices, crystal growth
Education 1995/03, Toyohashi University of Technology, Faculty of Engineering, Department of Electrical and Electronic Engineering, Graduated
1997/03, Toyohashi University of Technology, Graduate School, Division of Engineering, Master Course, Completed
2000/03, Toyohashi University of Technology, Graduate School, Division of Engineering, Doctor Course, Completed
Employment Experience Toyohashi University of Technology, Postdoctoral Fellowships of Japan Society for the Promotion of Science, 1998/04 - 2000/03
Saga University, Faculty of Science and Engineering, Electrical and Electronic Engineering, Research Associate, 2000/04 - 2003/03
Saga University, Synchrotron Light Application Center, Research Associate, 2003/04 - 2007/03
Saga University, Synchrotron Light Application Center, Assistant Professor, 2007/04 - 2009/01
Saga University, Faculty of Science and Engineering, Electrical and Electronic Engineering Electrical and Electronic Engineering, Associate Professor , 2009/02 - 2010/03
Lawrence Berkeley National Laboratory, Visiting Scholar, 2009/10 - 2010/09
Saga University, Graduate School of Science and Engineering Electrical and Electronic Engineering, Associate Professor, 2010/04 - *
Japan Science and Technology Agency (JST), PRESTO Researcher, 2010/10 - 2014/03
Field of specialization Electron/electric material engineering, Applied physical properties/crystal engineering
Membership in 
Academic Societies
IEEE, The Japanese Society for Synchrotron Radiation Research, The Japan Society of Applied Physics , The Japan Society of Applied Physics , The Japan Society of Applied Physics , The Institute of Electrical Engineers of Japan
Awards JAMS-CS AWARD(2009/09)
Themes for Ongoing Research Intermediate band solar cells based on highly mismatched alloys
Development of Green light emitting diode based on ZnTe
Development of high-efficiency CZTS solar cells
Research Themes in the Past Development of novel semiconductor processes and material characterizations using synchrotron radiation
Research Topics and Results
  1. Growth rate characteristics and photoluminescence properties of ZnTe grown by MOVPE and photo-assisted MOVPE 
  2. CuInSe2 and its related thin films prepared by rf sputtering and laser ablation methods 
  3. Characteristics of reactive ion etching for zinc telluride 
  4. Preparation of ordered vacancy chalcopyrite thin films by RF sputtering from CuInSe2 target with Na2Se 
  5. Preparation of Cu(In,Ga)2Se3.5 Thin Films by RF Sputtering from stoichiometric Cu(In,Ga)Se2 target with Na2Se 
  6. Characterization of Cu(In,Ga)2Se3.5 thin films prepared by rf sputtering from Cu(In,Ga)Se2 with Na2Se 
  7. Influence of incorporation of Na on CuInSe2 thin films 
  8. Effect of substrate temperature on properties of thin films prepared by RF sputtering from CuInSe2 target with Na2Se 
  9. Effect of electron irradiation on properties of CuInSe2 thin films 
  10. Effect of iodine doping on photoluminescence properties of ZnTe grown by metalorganic vapor phase epitaxy 
  11. Photoluminescence spectra of arsenic-doped ZnTe films grown by metal organic vapor phase epitaxy (MOVPE) using triethylarsine 
  12. Effect of Cl ion implantation on electrical properties of CuInSe2 thin films 
  13. Effect of 8MeV electron irradiation on electrical properties of CuInSe2 thin films 
  14. Growth and optical properties of high-quality ZnTe homoepitaxial layers by metalorganic vapor phase epitaxy 
  15. Photoluminescence properties of ZnTe homoepitaxial layers grown by synchrotron-radiation-excited growth using nitrogen carrier gas 
  16. Fabrication of ZnTe Light-Emitting Diodes Using Bridgman-Grown Substrates 
  17. Photoluminescence of iodine-doped ZnTe homoepitaxial layer grown by metalorganic vapor phase epitaxy 
  18. Photoluminescence of Cl-doped ZnTe epitaxial layer grown by atmospheric pressure metalorganic vapor phase epitaxy 
  19. Synchrotron Radiation-Excited Etching of ZnTe 
  20. Electroluminescence and photoluminescence characteristics in ZnTe LED fabricated by Al thermal diffusion 
  21. Growth of phosphorus-doped ZnTe layers by metalorganic vapour phase epitaxy using tris-dimethylaminophosphorus 
  22.  
  23. Selective Dry Etching of Zinc Telluride Using Aluminum Mask 
  24. Growth condition dependence of structure and surface morphology of GaN films on (111)GaAs substrates prepared by reactive sputtering 
  25. Microscopic investigations of aluminum nitride thin films grown by low-temperature reactive sputtering 
  26. Synchrotron radiation-excited etching of ZnTe using Ar gas 
  27. X-ray absorption near-edge fine structure study of AlInN semiconductors 
  28. Preparation of Cu2ZnSnS4 thin films by hybrid sputtering 
  29. Effect of surface treatment on properties of ZnTe LED fabricated by Al thermal diffusion 
  30. Effects of substrate temperature upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethlaminophosphorus 
  31. Phosphorus-doped ZnMgTe bulk crystals grown by Vertical Bridgman Method 
  32. Growth of Boron-Doped ZnTe Homoepitaxial Layer by Metalorganic Vapor Phase Epitaxy 
  33. Synchrotron Radiation-Excited Etching of ZnTe 
  34. Depth dependence of photoluminescence spectra of Al thermal diffusion layer in ZnTe LED 
  35. Influence of Al thermal diffusion time on electroluminescence properties of ZnTe LED 
  36. Synchrotron radiation-excited etching of ZnTe using Ar gas 
  37. Preparation of Cu2ZnSnS4 thin films by hybrid sputtering 
  38. Effect of surface treatment on properties of ZnTe LED fabricated by Al thermal diffusion 
  39. Effects of substrate temperature upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethlaminophosphorus 
  40. Growth of Boron-Doped ZnTe Homoepitaxial Layer by Metalorganic Vapor Phase Epitaxy 
  41. Growth of AlInN films for multi-junction tandem solar cells 
  42. Fabrication of stannite Cu2ZnSnS4 thin films by physical vapor deposition 
  43. Optical and Electrical Properties of Phosphorus-Doped ZnMgTe Bulk Crystals Grown by Bridgman Method 
  44. Low-pressure metalorganic vapor phase epitaxy growth of ZnTe 
  45. Growth Characteristics of ZnMgTe Layer on ZnTe Substrate by Metalorganic Vapor Phase Epitaxy 
  46. Effects of dopant transport rate upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethlaminophosphorus 
  47. Design of Beamline BL9 at Saga Light Source 
  48. Characterization of Al-doped ZnTe layer fabricated by Al thermal diffusion 
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  55. Observation of visible luminescence from indium nitride at room temperature 
  56. Recovery from Dry Etching Damage in ZnTe by Thermal Annealing 
  57. Strong Room-Temperature UV Luminescence from ZnO Grown by Metal Organic Decomposition Method (Brief Communication) 
  58. Fabrication of Cu2ZnSnS4 thin films by co-evaporation 
  59. Optical and electrical properties of phosphorus-doped ZnMgTe bulk crystals grown by Bridgman method 
  60. Cathodoluminescence study of anodic nanochannel alumina 
  61. Growth properties of AlN films on sapphire substrates by reactive sputtering 
  62. Reactive Ion Etching of Zinc Oxide Using Methane and Hydrogen Gases [published November 8, 2006] 
  63. Observation of ultra-broadband terahertz emission from ZnTe films grown by metaloganic vapor epitaxy 
  64. SIMS study of Al thermal diffusion in ZnTe 
  65. Post-annealing effect upon phosphorus-doped ZnTe homoepitaxial layers grown by MOVPE 
  66.  
  67.  
  68.  
  69. Development of Synchrotron Light-Excited Process 
  70. Synchrotron Light-Excited Growth and Etching of Semiconductors 
  71.  
  72. Research on semiconductor materials for optoelectronic applications 
  73.  
  74.  
  75. Effect of Mg ion implantation on electrical properties of CuInSe2 thin films 
  76. Design of Beamline BL9 at Saga Light Source 
  77. Effects of dopant transport rate upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethlaminophosphorus 
  78. Growth characteristics of ZnMgTe layer on ZnTe substrate by metalorganic vapor phase epitaxy 
  79. Low-pressure metalorganic vapor phase epitaxy growth of ZnTe 
  80. Growth and characterization of ZnTe epilayers on (100) GaAs substrates by metalorganic vapor phase epitaxy 
  81. Effects of Sapphire Substrate Preparation on ZnO Epitaxial Growth by Atmospheric-Pressure Metal Organic Chemical Vapor Deposition 
  82. Structural and Optical Properties of ZnMgO Films Grown by Metal Organic Decomposition 
  83.  
  84. Growth properties of reactive sputtered AlInN films 
  85. MOVPE Growth and characterization of high quality ZnTe homoepitaxial layers 
  86. Photoluminescence properties of chlorine-doped ZnTe grown by metalorganic vapor phase epitaxy 
  87. Photoluminescence properties of ZnTe homoepitaxial films deposited by photo-excited growth using synchrotron-radiation light 
  88. Effect of Substrate Position in i-ZnO Thin Film Formation to Cu(In,Ga)Se2 Solar Cell 
  89. Photoluminescence properties of iodine-doped ZnTe grown by metalorganic vapor phase epitaxy 
  90. Arsenic and Phosphor P-type Doping of Bulk ZnTe for LED Applications 
  91. Investigation into the influence of GaN buffer layer on crystallinity of InN 
  92. Growth of Arsenic-Doped ZnTe by MOVPE using Triethylarsine 
  93. Effect of Gas Flow Rate on Properties of ZnTe Epitaxial Layers Grown by Horizontal Metalorganic Vapor Phase Epitaxy 
  94. Heteroepitaxial Growth of GaN on (111)GaAs Substrates 
  95. Effect of 8MeV-electron irradiation on electrical properties of CuInSe2 thin films 
  96. Implantation of Chlorine ion into CuInSe2 thin films 
  97. Irradiation effect of 8MeV-electron on electrical properties of CuInSe2 thin films 
  98. Effect of electron irradiation on properties of CuInSe2 thin films 
  99. Mg ion implantation in CuInSe2 thin films 
  100. Preparation and characterization of (Cd,Zn)S thin films by chemical bath deposition for photovoltaic devices 
  101. Effect of substrate temperature on properties of thin films prepared by RF sputtering from CuInSe2 target with Na2Se 
  102. CHARACTERIZATION OF CuInSe2 THIN FILMS FABRICATED BY RF SPUTTERING WITH ALKALI METALS 
  103. Influence of incorporation of Na on CuInSe2 thin films 
  104. Characterization of CuInS2 thin films prepared by sputtering from binary compounds 
  105. Preparation of CuInSe2 thin films with large grain by excimer laser ablation 
  106. Influence of annealing temperature on the properties of Cu(In,Ga)Se2 thin films by thermal crystallization in Se vapor 
  107. Characterization of Cu(In,Ga)2Se3.5 thin films prepared by rf sputtering from Cu(In,Ga)Se2 with Na2Se 
  108. (Cd,Zn)S THIN FILMS PREPARED BY CHEMICAL BATH DEPOSITION FOR PHOTOVOLTAIC DEVICES 
  109. FABRICATION AND CHARACTERIZATION OF CuIn(SxSe1-x)2 THIN FILMS BY RF SPUTTERING 
  110. Characterization of CuInSe2 thin films prepared by Excimer Laser Ablaton 
  111. Influence of precursor structure on the properties of Cu(In,Ga)Se2 thin fims by thermal crystallization 
  112. Optical Properties of Anodic Nanochannel Alumina 
  113. Epitaxial growth properties of AlN films on sapphire substrates by reactive sputtering 
  114. Growth and Characterization of AlInN Films 
  115. Fabrication of ZnTe Epilayers for Terahertz Devices Applications 
  116. FABRICATION OF MICRO-ARRAY OF ZINC OXIDE SEMICONDUCTORS 
  117. Fabrication of Zinc Oxide Microstructures Using Synchrotron Light 
  118. Influence of surface treatment on properties of ZnTe LED fabricated by Al thermal diffusion 
  119. Characterization of Al-doped ZnTe layer fabricated by Al thermal diffusion 
  120. Reactive sputter deposition of AlInN thin films 
  121. Study of Al thermal diffusion in ZnTe by secondary ion mass spectroscopy 
  122. Post-annealing effect upon phosphorus-doped ZnTe homoepitaxial layers grown by MOVPE 
  123. Epitaxial Growth of Ternary AlInN on Sapphire Substrates 
  124. Nanofabrication of PTFE films by synchrotron radiation, 
  125. Epitaxial growth of ZnMgTe with a wide composition range on ZnTe substrate by molecular beam epitaxy, 
  126. Improvement of MOVPE grown ZnTe:P layers by annealing treatment, 
  127. Growth of undoped ZnMgTe layers by metalorganic vapour phase epitaxy, 
  128. Fabrication of ZnTe light emitting diode on p-ZnMgTe substrate by Al thermal diffusion, 
  129. Post-annealing effect upon electrical and optical properties of MOVPE grown P-doped ZnTe homoepitaxial layers, 
  130. Epitaxial growth of InN on (111) silicon substrates, 
  131. Microfabrication of ZnO on PTFE template patterned by synchrotron radiation, 
  132. Surface morphology of ZnTe:P(100) homoepitaxially grown by horizontal MOVPE technique, 
  133. Heteroepitaxial growth of ZnTe thin films on sapphire substrates for terahertz devices applications, 
  134.  
  135.  
  136.  
  137. Growth Properties of Polytetrafluoroethylene Films by Synchrotron Radiation Ablation 
  138. Structural properties of ZnTe epilayers grown on (0001) α-Al2O3 substrates by metalorganic vapor phase epitaxy 
  139. Structural and Optical Properties of AlInN Films Grown on Sapphire Substrates, 
  140. Epitaxial growth of ZnMgTe with a wide composition range on ZnTe substrate by molecular beam epitaxy 
  141. Improvement of MOVPE grown ZnTe:P layers by annealing treatment 
  142. Growth of undoped ZnMgTe layers by metalorganic vapour phase epitaxy 
  143. Post-annealing effect upon electrical and optical properties of MOVPE grown P-doped ZnTe homoepitaxial layers 
  144. Microfabrication of ZnO on PTFE Template Patterned by Synchrotron Radiation 
  145. Fabrication of a ZnTe light emitting diode by Al thermal diffusion into a p-ZnTe epitaxial layer on a p-ZnMgTe substrate 
  146. EFFECT OF COMPOSITIONAL RATIO ON PROPERTIES OF CU2ZNSNS4 THIN FILM FABRICATED BY CO-EVAPORATION, 
  147. FUNDAMENTAL PROPERTIES OF EPITAXIAL ALINN SEMICONDUCTORS, 
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  174. Present Status and Future Prospect of Saga Synchrotron Light Project 
  175. Growth and Characterization of ZnTe epilayers on GaAs substrate by metalorganic vapor phase epitaxy 
  176.  
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  183. Phosphorus-Doped ZnMgTe Bulk Crystals Grown by Vertical Bridgman Method 
  184.  
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  188.  
  189. Saga Synchrotron Light and its Application for Advanced Science/Technology and Regional Development 
  190. Fabrication of ZnTe Light Emitting Diode by Al Thermal Diffusion through Surface Oxidation Layer 
  191. Recent Progress in ZnTe-based green LED 
  192.  
  193. Surface morphology and optical properties of ZnTe epilayers on GaAs substrates by metalorganic vapor phase epitaxy 
  194. ZnTe based light emitting diodes fabricated by solid-state diffusion of Al through an Al oxide layer 
  195.  
  196. Influence of precursor transport rate upon the optical and electrical properties of P-ZnTe homoepilayer grown by MOVPE system 
  197. Optical Properties of ZnTe Grown on Sapphire Substrates 
  198. Epitaxial Growth and Characterization of AlInN Layers for Multi-Junction Tandem Solar Cells (Invited) 
  199. Heteroepitaxial growth of InN thin films on (111) silicon substrates 
  200. Optical Properties of ZnTe epilayers on GaAs substrate by metalorganic vapor phase epitaxy 
  201. Optoelectronics research in Saga University VBL 
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  217. Heteroepitaxial growth of InN layers on (111) silicon substrates 
  218. Improvement in the Quality of ZnTe Epilayers Grown on GaAs Substrates by Introducing a Low-temperature Buffer Layer 
  219. Enhanced light output from ZnTe light emitting diodes by utilizing thin film structure 
  220. Development of optoelectronic devices based on ZnTe 
  221. Growth and characterization of ZnTe for pure-green light emitting diodes and terahertz devices (Invited Lecture) 
  222. Growth of InGaN films by reactive sputtering 
  223. Characterization of Cu2ZnSnS4 thin film fabricated by co-evaporation 
  224. Cu(In,Ga)Se2 thin films with high Ga/III ratio prepared by sequential evaporation from ternary compounds and their solar cell applications 
  225. Effects of growth parameters on surface roughness of rf magnetron sputtered Al films 
  226. Influence of low-temperature buffer layer on properties of ZnTe grown on GaAs substrates 
  227. Temperature dependence of photoluminescence from P-doped ZnMgTe bulk crystals of high quality grown by Bridgman method 
  228. Growth of low-resistivity p-type ZnMgTe layers by MOVPE 
  229. Buffer Layer Effects on Properties of ZnTe for Terahertz Device Application 
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  241. Development of ZnTe Green LED at Saga University 
  242. Influence of composition ratio on properties of Cu2ZnSnS4 thin films fabricated by co-evaporation 
  243. Demonstration of homojunction ZnTe solar cells 
  244. Development of ZnTe1-xOx intermediate band solar cells 
  245. Preparation of Cu(In,Ga)Se2 thin films with Ga content of around 0.8 and their solar cell application 
  246.  
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  255. Growth of ZnTe nanowires by molecular beam exitaxy 
  256.  
  257. Growth of ZnTe nanowires by molecular beam exitaxy 
  258.  
  259. Temperature dependence of electrical properties for P-doped ZnMgTe bulk crystals of high quality grown by Bridgman method 
  260. Electronic structure of GaInN semiconductors investigated by x-ray absorption spectroscopy 
  261. Demonstration of ZnTe1-xOx Intermediate Band Solar Cell 
  262. Effect of VI/II ratio upon photoluminescence and electrical properties of phosphorus-doped ZnTe films grown by metalorganic vapor phase epitaxy 
  263. Effects of substrate temperature upon the properties of ZnMgTe layer grown by MOVPE 
  264. Molecular beam epitaxial growth and optical properties of highly mismatched ZnTe1-xOx alloys 
  265. Growth of ZnTe layers on (111) GaAs substrates by metalorganic vapor phase epitaxy 
  266. Enhanced Efficiency of ZnTe-Based Green Light-Emitting Diodes 
  267. Existence and removal of Cu2Se second phase in coevaporated Cu2ZnSnSe4 thin films 
  268. Crystal growth and doping of ZnTe-based materials for optoelectronic applications 
  269. Photo-modulated Reflectance of GaNAs Grown by Atomic Hydrogen-assisted MBE 
  270. DEVELOPMENT OF INTERMEDIATE BAND SOLAR CELL BASED ON ZNTE1-xOx SYNTHESIZED BY OXYGEN ION IMPLANTATION 
  271. Optical Characterization of ZnTeO Intermediate Band Solar Cells 
  272. MOLECULAR BEAM EPITAXIAL GROWTH OF ZnTe1-XOX LAYERS FOR INTERMEDIATE BAND SOLAR CELL APPLICATIONS 
  273. COMPOSITION DEPENDENCE OF ELECTRICAL PROPERTIES OF CU2ZNSNSE4 THIN FILMS FABRICATED BY CO-EVAPORATION 
  274. INHOMOGENEITY IN THE PHOTOREFLECTANCE OF GANAS GROWN BY ATOMIC H-ASSISTED MBE 
  275. 酸素イオン注入により形成したZnTeOの光学特性と中間バンド太陽電池応用 
  276. 分子線エピタキシー法により形成したZnTeO薄膜の光学特性 
  277. ZnTeO薄膜の分子線エピタキシャル成長と評価 
  278. Cu2ZnSnSe4薄膜におけるCu2Se相の選択エッチングに関する研究 
  279. 透明導電膜を用いたZnTe太陽電池の作製と評価 
  280. MBE法によるZnCdTe成長と物性評価 
  281. 酸素イオン注入により作製したZnTeO薄膜の評価 
  282. ZnCdTeOのMBE成長と物性評価 
  283. Synthesis of multiple-bandgap semiconductor for intermediate-band solar cells 
  284. Green LEDs and Solar Cells based on ZnTe-related Materials (Invited) 
  285.  
  286. Influence of dopant transport rate upon photoluminescence and electrical properties of phosphorus-doped ZnMgTe layers grown by MOVPE 
  287.  
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  291. Synthesis and Optical Properties of ZnTe1-xOx Highly Mismatched Alloys for Intermediate Band Solar Cells 
  292. Development of ZnTe-based solar cells 
  293. Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells 
  294. Synthesis of Cu2ZnSnS4 nanocrystals and fabrication of thin films for photovoltaic application 
  295. Fabrication of CZTS based Solar Cells Using Nanocrystals 
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  305. Development of ZnTe-based solar cells 
  306. Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells 
  307. Photocurrent induced by two-photon excitation in ZnTeO intermediate band solar cells 
  308. Photogenerated current by two-step photon excitation in ZnTeO Intermediate Band Solar Cells 
  309.  
  310.  
  311.  
  312. Photovoltaic research activity at Saga University (Invited lecture) 
  313. Intermediate band solar cells based on ZnTeO (Invited Talk) 
  314. Synthesis of the Cu2ZnSn(S,Se)4 alloys with tunable phase structure and composition via a novel non-toxic solution method 
  315. Recombination dynamics and carrier lifetimes in highly mismatched ZnTeO alloys 
  316. Photogenerated current by two-step photon excitation in ZnTeO Intermediate Band Solar Cells with n-ZnO window layer 
  317. Solution-Processed Cu2ZnSnS4 Nanocrystal Solar Cells: Efficient Stripping of Surface Insulating Layers using Alkylating Agents 
  318. Molecular beam epitaxy of n-ZnS epilayers for ZnTe solar cell application 
  319. Growth and characterization of ZnMgSeTe epilayers on ZnTe substrates by molecular beam epitaxy 
  320. Two-step photon absorption in intermediate band solar cells based on ZnTeO 
  321. Synthesis of the Cu2ZnSn(S,Se)4 Powder with Tunable Phase Structure and Composition via a Novel Non-Toxic Solution Method 
  322. Effect of KCN-Etching on Photovoltaic Properties of Cu2ZnSnSe4 Thin Film Solar Cell 
  323. Growth of n-type ZnS blocking epilayers for ZnTeO-based intermediate band solar cells 
  324. Development of ZnTeO-based Intermediate band solar cells (invited) 
  325. Molecular Beam Epitaxial Growth of N-Type ZnS Layers for ZnTeO-Based Intermediate Band Solar Cells 
  326. Carrier dynamics in dilute II-VI oxide highly-mismatched alloys (Invited Paper) 
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  334. ZnTeO-based intermediate band solar cells (Invited) 
  335. Cu2ZnSnS4 alloys synthesized from Cu2SnS3@ZnS nanoparticles via a facile hydrothermal approach 
  336. INTERMEDIATE BAND SOLAR CELLS BASED ON HIGHLY MISMATCHED ZNTEO ALLOYS 
  337. Intermediate band solar cells based on ZnTeO epilayer with n-ZnS blocking layer 
  338. Optical properties of ZnTe/ZnMgTe multiple quantum wells for optoelectronic device applications 
  339. ZnTeO-based intermediate band solar cells using MBE-grown n-type ZnS layers 
  340. n-ZnS窓層を用いたZnTeO中間バンド型太陽電池の特性評価 
  341. ZnTe基板上へのZnCdTeO薄膜のMBE成長と評価 
  342. MOVPE法によるm-planeサファイア基板上へのZnTeヘテロエピタキシャル成長の基板温度依存性 
  343. n型ZnS窓層を用いたZnTe太陽電池の作製とアニール効果 
  344. Recent progress of ZnTe-based optoelectronic devices (Invited lecture) 
  345. 多源蒸着法によるCu2SnSe3の作製と評価 
  346. Cu2ZnSn(S,Se)4薄膜太陽電池応用を目指したZnO:Alおよびi-ZnO薄膜の作製と評価 
  347. 分子線エピタキシ一法によるZnTe基阪上へのClドープCdTe層の成長 
  348. ZnTe基板上へのClドープCdTe薄膜のMBE成長 
  349. MBEによる高不整合材料ZnCdTeO薄膜の成長 
  350. Multiple bandgap semiconductor ZnTeO for intermediate band solar cells 
  351. Carrier dynamics in dilute II-VI oxide highly-mismatched alloys