Detailed Information
Name TANAKA Tooru
Department Graduate School of Science and Engineering Electrical and Electronic Engineering  Electrical and Electronic Engineering
Job Title Professor Degree Obtained Doctor (Engineering)(2000/03)
Master (Engineering)(1997/03)
E-mail
Homepage http://www.sc.ec.saga-u.ac.jp/en/
Research Field/Keywords for 
Research Field
Optoelectronic devices, Semiconductor physics
Education 1995/03, Toyohashi University of Technology, Faculty of Engineering, Department of Electrical and Electronic Engineering, Graduated
1997/03, Toyohashi University of Technology, Graduate School, Division of Engineering, Master Course, Completed
2000/03, Toyohashi University of Technology, Graduate School, Division of Engineering, Doctor Course, Completed
Employment Experience Toyohashi University of Technology, Postdoctoral Fellowships of Japan Society for the Promotion of Science, 1998/04 - 2000/03
Saga University, Faculty of Science and Engineering, Electrical and Electronic Engineering, Research Associate, 2000/04 - 2003/03
Saga University, Synchrotron Light Application Center, Research Associate, 2003/04 - 2007/03
Saga University, Synchrotron Light Application Center, Assistant Professor, 2007/04 - 2009/01
Saga University, Faculty of Science and Engineering, Electrical and Electronic Engineering Electrical and Electronic Engineering, Associate Professor , 2009/02 - 2010/03
Lawrence Berkeley National Laboratory, Visiting Scholar, 2009/10 - 2010/09
Saga University, Graduate School of Science and Engineering Electrical and Electronic Engineering, Associate Professor, 2010/04 - 2015/09
Japan Science and Technology Agency (JST), PRESTO Researcher, 2010/10 - 2014/03
Saga University, Graduate School of Science and Engineering, Electrical and Electronic Engineering  Electrical and Electronic Engineering, Professor, 2015/10 - *
Field of specialization Electron/electric material engineering, Energy studies
Membership in 
Academic Societies
The Japan Society of Applied Physics (Kyushu Chapter Director), The Institute of Electrical Engineers of Japan , IEEE, The Surface Science Society of Japan, The Japanese Society for Synchrotron Radiation Research
Awards JAMS-CS AWARD(2009/09)
Themes for Ongoing Research Intermediate band solar cells based on highly mismatched alloys
Development of Green light emitting diode based on ZnTe
Development of high-efficiency CZTS solar cells
Research Themes in the Past Development of novel semiconductor processes and material characterizations using synchrotron radiation
Research Topics and Results
  1. MBE法によるClドープZnTeO成長と中間バンド型太陽電池への応用 2017
  2. 金属積層プリカーサを用いたセレン化法によるCu2ZnSnSe4薄膜の作製 2017
  3. ZnTeO-based multiple band gap semiconductors for intermediate band solar cells (invited) 2016
  4. Cl-doping in Highly Mismatched ZnTe1-xOx Alloys for Intermediate Band Solar Cells 2016
  5. Growth of Zn1-xCdxTe1-yOy (x=0.2~0.5) highly mismatched alloys for intermediate band solar cells 2016
  6. MBEによるサファイア基板上ZnCdO薄膜の光学的・電気的特性評価 2016
  7. MBEによるZn1-xCdxTe1-yOy (x=0.2~0.5)薄膜の成長と評価 2016
  8. MBE成長ZnCdTeO薄膜の光学特性の評価と太陽電池応用 2016
  9. 中間バンド型太陽電池用ZnCdTeO薄膜の成長と評価 2016
  10. ZnCdO透明導電膜の作製と評価 2016
  11. 金属積層プリカーサのセレン化によるCu2ZnSnSe4 薄膜の作製と評価 2016
  12. MBE により成長したZnCdO 薄膜の特性評価 2016
  13. Cl ドープZnTeO 薄膜のMBE 成長と中間バンド型太陽電池への応用 2016
  14. Synthesis of Cl-doped ZnTeO for Intermediate Band Solar Cells 2016
  15. Compositional dependence of optical transition energies in highly mismatched Zn1-xCdxTe1-yOy alloys 2016
  16. Influence of Processing Conditions on the Performance of Cu2ZnSnS4 Nanocrystal Solar Cells 2016
  17. 5. 高不整合材料による中間バンド型太陽電池の創製 2016
  18. MBE法によるClドープZnTeOの光学特性の評価 2016
  19. 分子線エピタキシー法によるZnCdO薄膜の成長と評価 2016
  20. Two-photon absorption in GaAs1-x-yPyNx intermediate-band solar cells 2015
  21. Effects of a semiconductor matrix on the band anticrossing in dilute group II-VI oxides 2015
  22. Mild solvothermal synthesis of Cu2ZnSn(SxSe1-x)4 nanocrystals with tunable phase structure and composition 2015
  23. Synthesis of Copper−Antimony-Sulfide Nanocrystals for Solution-Processed Solar Cells 2015
  24. Multicolor Electroluminescence from Intermediate Band Solar Cell Structures 2015
  25. マルチバンドギャップ半導体ZnTeOを用いた中間バンド型太陽電池の開発 2015
  26. MBEによるCl添加ZnTeO薄膜の成長と評価 2015
  27. 分子線エピタキシー法によるZnCdO薄膜の作製と評価 2015
  28. 多源蒸着法によるCu2SnSe3薄膜の作製および評価 2015
  29. MBE法によるClドープZnTeOのフォトルミネッセンス特性の評価 2015
  30. Zn1-xCdxTe薄膜のMBE成長と太陽電池への応用 2015
  31. Growth and Characterization of Highly Mismatched Zn1-xCdxTe1-yOy Alloys for Intermediate Band Solar Cells 2015
  32. Characterization of Cu2SnSe3 Thin Films Fabricated by Coevaporation 2015
  33. Multicolor Electroluminescence from Dilute Nitride Based Intermediate Band Solar Cell Structures 2015
  34. ZnTeO-related multiple bandgap semiconductors for intermediate band solar cells application (Invited lecture) 2015
  35. ZnTe基板上へのClドープCdTe薄膜のMBE成長 2015
  36. MBEによる高不整合材料ZnCdTeO薄膜の成長 2015
  37. ZnTeO-based intermediate band solar cells using MBE-grown n-type ZnS layers 2014
  38. n-ZnS窓層を用いたZnTeO中間バンド型太陽電池の特性評価 2014
  39. ZnTe基板上へのZnCdTeO薄膜のMBE成長と評価 2014
  40. MOVPE法によるm-planeサファイア基板上へのZnTeヘテロエピタキシャル成長の基板温度依存性 2014
  41. n型ZnS窓層を用いたZnTe太陽電池の作製とアニール効果 2014
  42. Recent progress of ZnTe-based optoelectronic devices (Invited lecture) 2014
  43. 多源蒸着法によるCu2SnSe3の作製と評価 2014
  44. Cu2ZnSn(S,Se)4薄膜太陽電池応用を目指したZnO:Alおよびi-ZnO薄膜の作製と評価 2014
  45. 分子線エピタキシ一法によるZnTe基阪上へのClドープCdTe層の成長 2014
  46. Multiple bandgap semiconductor ZnTeO for intermediate band solar cells 2014
  47. Carrier dynamics in dilute II-VI oxide highly-mismatched alloys 2014
  48. Photogenerated current by two-step photon excitation in ZnTeO Intermediate Band Solar Cells with n-ZnO window layer 2014
  49. Carrier dynamics in dilute II-VI oxide highly-mismatched alloys (Invited Paper) 2014
  50.  2014
  51. ZnTeO-based intermediate band solar cells (Invited) 2014
  52. Cu2ZnSnS4 alloys synthesized from Cu2SnS3@ZnS nanoparticles via a facile hydrothermal approach 2014
  53. INTERMEDIATE BAND SOLAR CELLS BASED ON HIGHLY MISMATCHED ZNTEO ALLOYS 2014
  54. Intermediate band solar cells based on ZnTeO epilayer with n-ZnS blocking layer 2014
  55. Optical properties of ZnTe/ZnMgTe multiple quantum wells for optoelectronic device applications 2014
  56.  2013
  57. Development of ZnTe-based solar cells 2013
  58. Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells 2013
  59. Photocurrent induced by two-photon excitation in ZnTeO intermediate band solar cells 2013
  60. Photogenerated current by two-step photon excitation in ZnTeO Intermediate Band Solar Cells 2013
  61.  2013
  62.  2013
  63.  2013
  64. Photovoltaic research activity at Saga University (Invited lecture) 2013
  65. Intermediate band solar cells based on ZnTeO (Invited Talk) 2013
  66. Synthesis of the Cu2ZnSn(S,Se)4 alloys with tunable phase structure and composition via a novel non-toxic solution method 2013
  67. Recombination dynamics and carrier lifetimes in highly mismatched ZnTeO alloys 2013
  68. Solution-Processed Cu2ZnSnS4 Nanocrystal Solar Cells: Efficient Stripping of Surface Insulating Layers using Alkylating Agents 2013
  69. Molecular beam epitaxy of n-ZnS epilayers for ZnTe solar cell application 2013
  70. Growth and characterization of ZnMgSeTe epilayers on ZnTe substrates by molecular beam epitaxy 2013
  71. Two-step photon absorption in intermediate band solar cells based on ZnTeO 2013
  72. Synthesis of the Cu2ZnSn(S,Se)4 Powder with Tunable Phase Structure and Composition via a Novel Non-Toxic Solution Method 2013
  73. Effect of KCN-Etching on Photovoltaic Properties of Cu2ZnSnSe4 Thin Film Solar Cell 2013
  74. Growth of n-type ZnS blocking epilayers for ZnTeO-based intermediate band solar cells 2013
  75. Development of ZnTeO-based Intermediate band solar cells (invited) 2013
  76. Molecular Beam Epitaxial Growth of N-Type ZnS Layers for ZnTeO-Based Intermediate Band Solar Cells 2013
  77.  2013
  78.  2013
  79.  2013
  80.  2013
  81.  2013
  82.  2013
  83. Effects of substrate temperature upon the properties of ZnMgTe layer grown by MOVPE 2012
  84. Molecular beam epitaxial growth and optical properties of highly mismatched ZnTe1-xOx alloys 2012
  85. Growth of ZnTe layers on (111) GaAs substrates by metalorganic vapor phase epitaxy 2012
  86. Enhanced Efficiency of ZnTe-Based Green Light-Emitting Diodes 2012
  87. Existence and removal of Cu2Se second phase in coevaporated Cu2ZnSnSe4 thin films 2012
  88. ZnCdTeOのMBE成長と物性評価 2012
  89. Synthesis of multiple-bandgap semiconductor for intermediate-band solar cells 2012
  90. Green LEDs and Solar Cells based on ZnTe-related Materials (Invited) 2012
  91. Influence of dopant transport rate upon photoluminescence and electrical properties of phosphorus-doped ZnMgTe layers grown by MOVPE 2012
  92.  2012
  93.  2012
  94.  2012
  95. Synthesis and Optical Properties of ZnTe1-xOx Highly Mismatched Alloys for Intermediate Band Solar Cells 2012
  96. Development of ZnTe-based solar cells 2012
  97. Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells 2012
  98. Synthesis of Cu2ZnSnS4 nanocrystals and fabrication of thin films for photovoltaic application 2012
  99. Fabrication of CZTS based Solar Cells Using Nanocrystals 2012
  100.  2012
  101.  2012
  102.  2012
  103.  2012
  104.  2012
  105.  2012
  106.  2012
  107.  2012
  108.  2012
  109.  2011
  110.  2011
  111. Growth of ZnTe nanowires by molecular beam exitaxy 2011
  112.  2011
  113. Temperature dependence of electrical properties for P-doped ZnMgTe bulk crystals of high quality grown by Bridgman method 2011
  114. Electronic structure of GaInN semiconductors investigated by x-ray absorption spectroscopy 2011
  115. Demonstration of ZnTe1-xOx Intermediate Band Solar Cell 2011
  116. Effect of VI/II ratio upon photoluminescence and electrical properties of phosphorus-doped ZnTe films grown by metalorganic vapor phase epitaxy 2011
  117. Crystal growth and doping of ZnTe-based materials for optoelectronic applications 2011
  118. Photo-modulated Reflectance of GaNAs Grown by Atomic Hydrogen-assisted MBE 2011
  119. DEVELOPMENT OF INTERMEDIATE BAND SOLAR CELL BASED ON ZNTE1-xOx SYNTHESIZED BY OXYGEN ION IMPLANTATION 2011
  120. Optical Characterization of ZnTeO Intermediate Band Solar Cells 2011
  121. MOLECULAR BEAM EPITAXIAL GROWTH OF ZnTe1-XOX LAYERS FOR INTERMEDIATE BAND SOLAR CELL APPLICATIONS 2011
  122. COMPOSITION DEPENDENCE OF ELECTRICAL PROPERTIES OF CU2ZNSNSE4 THIN FILMS FABRICATED BY CO-EVAPORATION 2011
  123. INHOMOGENEITY IN THE PHOTOREFLECTANCE OF GANAS GROWN BY ATOMIC H-ASSISTED MBE 2011
  124. 酸素イオン注入により形成したZnTeOの光学特性と中間バンド太陽電池応用 2011
  125. 分子線エピタキシー法により形成したZnTeO薄膜の光学特性 2011
  126. ZnTeO薄膜の分子線エピタキシャル成長と評価 2011
  127. Cu2ZnSnSe4薄膜におけるCu2Se相の選択エッチングに関する研究 2011
  128. 透明導電膜を用いたZnTe太陽電池の作製と評価 2011
  129. MBE法によるZnCdTe成長と物性評価 2011
  130. 酸素イオン注入により作製したZnTeO薄膜の評価 2011
  131. Development of ZnTe Green LED at Saga University 2010
  132. Influence of composition ratio on properties of Cu2ZnSnS4 thin films fabricated by co-evaporation 2010
  133. Demonstration of homojunction ZnTe solar cells 2010
  134. Development of ZnTe1-xOx intermediate band solar cells 2010
  135. Preparation of Cu(In,Ga)Se2 thin films with Ga content of around 0.8 and their solar cell application 2010
  136.  2010
  137.  2010
  138.  2010
  139.  2010
  140.  2010
  141.  2010
  142.  2010
  143.  2010
  144. Growth of ZnTe nanowires by molecular beam exitaxy 2010
  145. Recent Progress in ZnTe-based green LED 2009
  146.  2009
  147. Surface morphology and optical properties of ZnTe epilayers on GaAs substrates by metalorganic vapor phase epitaxy 2009
  148. ZnTe based light emitting diodes fabricated by solid-state diffusion of Al through an Al oxide layer 2009
  149.  2009
  150.  2009
  151.  2009
  152.  2009
  153. Heteroepitaxial growth of InN layers on (111) silicon substrates 2009
  154. Improvement in the Quality of ZnTe Epilayers Grown on GaAs Substrates by Introducing a Low-temperature Buffer Layer 2009
  155. Enhanced light output from ZnTe light emitting diodes by utilizing thin film structure 2009
  156. Development of optoelectronic devices based on ZnTe 2009
  157. Growth and characterization of ZnTe for pure-green light emitting diodes and terahertz devices (Invited Lecture) 2009
  158. Growth of InGaN films by reactive sputtering 2009
  159. Characterization of Cu2ZnSnS4 thin film fabricated by co-evaporation 2009
  160. Cu(In,Ga)Se2 thin films with high Ga/III ratio prepared by sequential evaporation from ternary compounds and their solar cell applications 2009
  161. Effects of growth parameters on surface roughness of rf magnetron sputtered Al films 2009
  162. Influence of low-temperature buffer layer on properties of ZnTe grown on GaAs substrates 2009
  163. Temperature dependence of photoluminescence from P-doped ZnMgTe bulk crystals of high quality grown by Bridgman method 2009
  164. Growth of low-resistivity p-type ZnMgTe layers by MOVPE 2009
  165. Buffer Layer Effects on Properties of ZnTe for Terahertz Device Application 2009
  166.  2009
  167.  2009
  168.  2009
  169.  2009
  170.  2009
  171.  2009
  172.  2009
  173.  2009
  174.  2009
  175.  2009
  176.  2009
  177. Post-annealing effect upon electrical and optical properties of MOVPE grown P-doped ZnTe homoepitaxial layers 2009
  178. Fabrication of a ZnTe light emitting diode by Al thermal diffusion into a p-ZnTe epitaxial layer on a p-ZnMgTe substrate 2009
  179. Fabrication of ZnTe Light Emitting Diode by Al Thermal Diffusion through Surface Oxidation Layer 2008
  180. Influence of precursor transport rate upon the optical and electrical properties of P-ZnTe homoepilayer grown by MOVPE system 2008
  181. Optical Properties of ZnTe Grown on Sapphire Substrates 2008
  182. Epitaxial Growth and Characterization of AlInN Layers for Multi-Junction Tandem Solar Cells (Invited) 2008
  183. Heteroepitaxial growth of InN thin films on (111) silicon substrates 2008
  184. Optical Properties of ZnTe epilayers on GaAs substrate by metalorganic vapor phase epitaxy 2008
  185. Optoelectronics research in Saga University VBL 2008
  186.  2008
  187.  2008
  188.  2008
  189.  2008
  190.  2008
  191.  2008
  192.  2008
  193.  2008
  194.  2008
  195.  2008
  196.  2008
  197.  2008
  198. Structural and Optical Properties of AlInN Films Grown on Sapphire Substrates, 2008
  199. Epitaxial growth of ZnMgTe with a wide composition range on ZnTe substrate by molecular beam epitaxy 2008
  200. Improvement of MOVPE grown ZnTe:P layers by annealing treatment 2008
  201. Growth of undoped ZnMgTe layers by metalorganic vapour phase epitaxy 2008
  202. Microfabrication of ZnO on PTFE Template Patterned by Synchrotron Radiation 2008
  203.  2008
  204.  2008
  205.  2008
  206. Observation of ultra-broadband terahertz emission from ZnTe films grown by metaloganic vapor epitaxy 2007
  207. Design of Beamline BL9 at Saga Light Source 2007
  208.  2007
  209. Effects of dopant transport rate upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethlaminophosphorus 2007
  210. Growth characteristics of ZnMgTe layer on ZnTe substrate by metalorganic vapor phase epitaxy 2007
  211. Low-pressure metalorganic vapor phase epitaxy growth of ZnTe 2007
  212. Growth and characterization of ZnTe epilayers on (100) GaAs substrates by metalorganic vapor phase epitaxy 2007
  213. Effects of Sapphire Substrate Preparation on ZnO Epitaxial Growth by Atmospheric-Pressure Metal Organic Chemical Vapor Deposition 2007
  214. Structural and Optical Properties of ZnMgO Films Grown by Metal Organic Decomposition 2007
  215.  2007
  216. FABRICATION OF MICRO-ARRAY OF ZINC OXIDE SEMICONDUCTORS 2007
  217. Characterization of Al-doped ZnTe layer fabricated by Al thermal diffusion 2007
  218. Reactive sputter deposition of AlInN thin films 2007
  219. Study of Al thermal diffusion in ZnTe by secondary ion mass spectroscopy 2007
  220. Post-annealing effect upon phosphorus-doped ZnTe homoepitaxial layers grown by MOVPE 2007
  221. Epitaxial Growth of Ternary AlInN on Sapphire Substrates 2007
  222. Nanofabrication of PTFE films by synchrotron radiation, 2007
  223. Epitaxial growth of ZnMgTe with a wide composition range on ZnTe substrate by molecular beam epitaxy, 2007
  224. Improvement of MOVPE grown ZnTe:P layers by annealing treatment, 2007
  225. Growth of undoped ZnMgTe layers by metalorganic vapour phase epitaxy, 2007
  226. Fabrication of ZnTe light emitting diode on p-ZnMgTe substrate by Al thermal diffusion, 2007
  227. Post-annealing effect upon electrical and optical properties of MOVPE grown P-doped ZnTe homoepitaxial layers, 2007
  228. Epitaxial growth of InN on (111) silicon substrates, 2007
  229. Microfabrication of ZnO on PTFE template patterned by synchrotron radiation, 2007
  230. Surface morphology of ZnTe:P(100) homoepitaxially grown by horizontal MOVPE technique, 2007
  231. Heteroepitaxial growth of ZnTe thin films on sapphire substrates for terahertz devices applications, 2007
  232.  2007
  233.  2007
  234. Growth Properties of Polytetrafluoroethylene Films by Synchrotron Radiation Ablation 2007
  235. Structural properties of ZnTe epilayers grown on (0001) α-Al2O3 substrates by metalorganic vapor phase epitaxy 2007
  236. EFFECT OF COMPOSITIONAL RATIO ON PROPERTIES OF CU2ZNSNS4 THIN FILM FABRICATED BY CO-EVAPORATION, 2007
  237. FUNDAMENTAL PROPERTIES OF EPITAXIAL ALINN SEMICONDUCTORS, 2007
  238.  2007
  239.  2007
  240.  2007
  241.  2007
  242.  2007
  243.  2007
  244.  2007
  245.  2007
  246.  2007
  247.  2007
  248.  2007
  249.  2007
  250.  2007
  251. Effect of surface treatment on properties of ZnTe LED fabricated by Al thermal diffusion 2006
  252. Effects of substrate temperature upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethlaminophosphorus 2006
  253. Phosphorus-doped ZnMgTe bulk crystals grown by Vertical Bridgman Method 2006
  254. Growth of Boron-Doped ZnTe Homoepitaxial Layer by Metalorganic Vapor Phase Epitaxy 2006
  255. Fabrication of stannite Cu2ZnSnS4 thin films by physical vapor deposition 2006
  256. Optical and Electrical Properties of Phosphorus-Doped ZnMgTe Bulk Crystals Grown by Bridgman Method 2006
  257. Low-pressure metalorganic vapor phase epitaxy growth of ZnTe 2006
  258. Growth Characteristics of ZnMgTe Layer on ZnTe Substrate by Metalorganic Vapor Phase Epitaxy 2006
  259. Effects of dopant transport rate upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethlaminophosphorus 2006
  260. Design of Beamline BL9 at Saga Light Source 2006
  261. Characterization of Al-doped ZnTe layer fabricated by Al thermal diffusion 2006
  262. Fabrication of Cu2ZnSnS4 thin films by co-evaporation 2006
  263. Optical and electrical properties of phosphorus-doped ZnMgTe bulk crystals grown by Bridgman method 2006
  264. Cathodoluminescence study of anodic nanochannel alumina 2006
  265. Growth properties of AlN films on sapphire substrates by reactive sputtering 2006
  266. Reactive Ion Etching of Zinc Oxide Using Methane and Hydrogen Gases [published November 8, 2006] 2006
  267. SIMS study of Al thermal diffusion in ZnTe 2006
  268. Post-annealing effect upon phosphorus-doped ZnTe homoepitaxial layers grown by MOVPE 2006
  269. Research on semiconductor materials for optoelectronic applications 2006
  270.  2006
  271.  2006
  272. Growth and Characterization of AlInN Films 2006
  273. Fabrication of ZnTe Epilayers for Terahertz Devices Applications 2006
  274. Fabrication of Zinc Oxide Microstructures Using Synchrotron Light 2006
  275. Influence of surface treatment on properties of ZnTe LED fabricated by Al thermal diffusion 2006
  276.  2006
  277.  2006
  278.  2006
  279.  2006
  280.  2006
  281.  2006
  282.  2006
  283.  2006
  284.  2006
  285.  2006
  286. Present Status and Future Prospect of Saga Synchrotron Light Project 2006
  287. Growth and Characterization of ZnTe epilayers on GaAs substrate by metalorganic vapor phase epitaxy 2006
  288. Microscopic investigations of aluminum nitride thin films grown by low-temperature reactive sputtering 2005
  289. Synchrotron radiation-excited etching of ZnTe using Ar gas 2005
  290. X-ray absorption near-edge fine structure study of AlInN semiconductors 2005
  291. Preparation of Cu2ZnSnS4 thin films by hybrid sputtering 2005
  292. Effect of surface treatment on properties of ZnTe LED fabricated by Al thermal diffusion 2005
  293. Effects of substrate temperature upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethlaminophosphorus 2005
  294. Growth of Boron-Doped ZnTe Homoepitaxial Layer by Metalorganic Vapor Phase Epitaxy 2005
  295. Growth of AlInN films for multi-junction tandem solar cells 2005
  296.  2005
  297. Observation of visible luminescence from indium nitride at room temperature 2005
  298. Recovery from Dry Etching Damage in ZnTe by Thermal Annealing 2005
  299. Strong Room-Temperature UV Luminescence from ZnO Grown by Metal Organic Decomposition Method (Brief Communication) 2005
  300.  2005
  301. Optical Properties of Anodic Nanochannel Alumina 2005
  302. Epitaxial growth properties of AlN films on sapphire substrates by reactive sputtering 2005
  303.  2005
  304.  2005
  305.  2005
  306.  2005
  307.  2005
  308.  2005
  309.  2005
  310.  2005
  311. Phosphorus-Doped ZnMgTe Bulk Crystals Grown by Vertical Bridgman Method 2005
  312.  2004
  313.  2004
  314.  2004
  315.  2004
  316. Saga Synchrotron Light and its Application for Advanced Science/Technology and Regional Development 2004
  317. Synchrotron Radiation-Excited Etching of ZnTe 2004
  318. Electroluminescence and photoluminescence characteristics in ZnTe LED fabricated by Al thermal diffusion 2004
  319. Growth of phosphorus-doped ZnTe layers by metalorganic vapour phase epitaxy using tris-dimethylaminophosphorus 2004
  320.  2004
  321. Selective Dry Etching of Zinc Telluride Using Aluminum Mask 2004
  322. Growth condition dependence of structure and surface morphology of GaN films on (111)GaAs substrates prepared by reactive sputtering 2004
  323. Synchrotron radiation-excited etching of ZnTe using Ar gas 2004
  324. Preparation of Cu2ZnSnS4 thin films by hybrid sputtering 2004
  325.  2004
  326.  2004
  327.  2004
  328.  2004
  329. Development of Synchrotron Light-Excited Process 2004
  330. Synchrotron Light-Excited Growth and Etching of Semiconductors 2004
  331.  2004
  332. Characteristics of reactive ion etching for zinc telluride 2003
  333. Effect of Cl ion implantation on electrical properties of CuInSe2 thin films 2003
  334. Effect of 8MeV electron irradiation on electrical properties of CuInSe2 thin films 2003
  335. Growth and optical properties of high-quality ZnTe homoepitaxial layers by metalorganic vapor phase epitaxy 2003
  336. Photoluminescence properties of ZnTe homoepitaxial layers grown by synchrotron-radiation-excited growth using nitrogen carrier gas 2003
  337. Fabrication of ZnTe Light-Emitting Diodes Using Bridgman-Grown Substrates 2003
  338. Photoluminescence of iodine-doped ZnTe homoepitaxial layer grown by metalorganic vapor phase epitaxy 2003
  339. Photoluminescence of Cl-doped ZnTe epitaxial layer grown by atmospheric pressure metalorganic vapor phase epitaxy 2003
  340. Synchrotron Radiation-Excited Etching of ZnTe 2003
  341. Depth dependence of photoluminescence spectra of Al thermal diffusion layer in ZnTe LED 2003
  342. Influence of Al thermal diffusion time on electroluminescence properties of ZnTe LED 2003
  343.  2003
  344. Growth properties of reactive sputtered AlInN films 2003
  345. Effect of iodine doping on photoluminescence properties of ZnTe grown by metalorganic vapor phase epitaxy 2002
  346. Photoluminescence spectra of arsenic-doped ZnTe films grown by metal organic vapor phase epitaxy (MOVPE) using triethylarsine 2002
  347.  2002
  348.  2002
  349.  2002
  350. MOVPE Growth and characterization of high quality ZnTe homoepitaxial layers 2002
  351. Photoluminescence properties of chlorine-doped ZnTe grown by metalorganic vapor phase epitaxy 2002
  352. Photoluminescence properties of ZnTe homoepitaxial films deposited by photo-excited growth using synchrotron-radiation light 2002
  353. Growth rate characteristics and photoluminescence properties of ZnTe grown by MOVPE and photo-assisted MOVPE 2001
  354. CuInSe2 and its related thin films prepared by rf sputtering and laser ablation methods 2001
  355. Effect of Substrate Position in i-ZnO Thin Film Formation to Cu(In,Ga)Se2 Solar Cell 2001
  356. Photoluminescence properties of iodine-doped ZnTe grown by metalorganic vapor phase epitaxy 2001
  357. Arsenic and Phosphor P-type Doping of Bulk ZnTe for LED Applications 2001
  358. Investigation into the influence of GaN buffer layer on crystallinity of InN 2001
  359. Growth of Arsenic-Doped ZnTe by MOVPE using Triethylarsine 2001
  360. Effect of Gas Flow Rate on Properties of ZnTe Epitaxial Layers Grown by Horizontal Metalorganic Vapor Phase Epitaxy 2001
  361. Heteroepitaxial Growth of GaN on (111)GaAs Substrates 2001
  362. Effect of 8MeV-electron irradiation on electrical properties of CuInSe2 thin films 2001
  363. Implantation of Chlorine ion into CuInSe2 thin films 2001
  364. Effect of electron irradiation on properties of CuInSe2 thin films 2000
  365. Effect of Mg ion implantation on electrical properties of CuInSe2 thin films 2000
  366. Irradiation effect of 8MeV-electron on electrical properties of CuInSe2 thin films 2000
  367. Effect of electron irradiation on properties of CuInSe2 thin films 2000
  368. Effect of substrate temperature on properties of thin films prepared by RF sputtering from CuInSe2 target with Na2Se 1999
  369. Mg ion implantation in CuInSe2 thin films 1999
  370. Characterization of Cu(In,Ga)2Se3.5 thin films prepared by rf sputtering from Cu(In,Ga)Se2 with Na2Se 1998
  371. Influence of incorporation of Na on CuInSe2 thin films 1998
  372. Preparation and characterization of (Cd,Zn)S thin films by chemical bath deposition for photovoltaic devices 1998
  373. Effect of substrate temperature on properties of thin films prepared by RF sputtering from CuInSe2 target with Na2Se 1998
  374. CHARACTERIZATION OF CuInSe2 THIN FILMS FABRICATED BY RF SPUTTERING WITH ALKALI METALS 1998
  375. Preparation of Cu(In,Ga)2Se3.5 Thin Films by RF Sputtering from stoichiometric Cu(In,Ga)Se2 target with Na2Se 1997
  376. Influence of incorporation of Na on CuInSe2 thin films 1997
  377. Preparation of ordered vacancy chalcopyrite thin films by RF sputtering from CuInSe2 target with Na2Se 1996
  378. Characterization of CuInS2 thin films prepared by sputtering from binary compounds 1996
  379. Preparation of CuInSe2 thin films with large grain by excimer laser ablation 1996
  380. Influence of annealing temperature on the properties of Cu(In,Ga)Se2 thin films by thermal crystallization in Se vapor 1996
  381. Characterization of Cu(In,Ga)2Se3.5 thin films prepared by rf sputtering from Cu(In,Ga)Se2 with Na2Se 1996
  382. (Cd,Zn)S THIN FILMS PREPARED BY CHEMICAL BATH DEPOSITION FOR PHOTOVOLTAIC DEVICES 1995
  383. FABRICATION AND CHARACTERIZATION OF CuIn(SxSe1-x)2 THIN FILMS BY RF SPUTTERING 1995
  384. Characterization of CuInSe2 thin films prepared by Excimer Laser Ablaton 1995
  385. Influence of precursor structure on the properties of Cu(In,Ga)Se2 thin fims by thermal crystallization 1995