Detailed Information
Name TANAKA Tooru
Department Graduate School of Science and Engineering Electrical and Electronic Engineering  Electrical and Electronic Engineering
Job Title Professor Degree Obtained Doctor (Engineering)(2000/03)
Master (Engineering)(1997/03)
E-mail
Homepage http://www.sc.ec.saga-u.ac.jp/en/
Research Field/Keywords for 
Research Field
Optoelectronic devices, Semiconductor physics
Education 1995/03, Toyohashi University of Technology, Faculty of Engineering, Department of Electrical and Electronic Engineering, Graduated
1997/03, Toyohashi University of Technology, Graduate School, Division of Engineering, Master Course, Completed
2000/03, Toyohashi University of Technology, Graduate School, Division of Engineering, Doctor Course, Completed
Employment Experience Toyohashi University of Technology, Postdoctoral Fellowships of Japan Society for the Promotion of Science, 1998/04 - 2000/03
Saga University, Faculty of Science and Engineering, Electrical and Electronic Engineering, Research Associate, 2000/04 - 2003/03
Saga University, Synchrotron Light Application Center, Research Associate, 2003/04 - 2007/03
Saga University, Synchrotron Light Application Center, Assistant Professor, 2007/04 - 2009/01
Saga University, Faculty of Science and Engineering, Electrical and Electronic Engineering Electrical and Electronic Engineering, Associate Professor , 2009/02 - 2010/03
Lawrence Berkeley National Laboratory, Visiting Scholar, 2009/10 - 2010/09
Saga University, Graduate School of Science and Engineering Electrical and Electronic Engineering, Associate Professor, 2010/04 - 2015/09
Japan Science and Technology Agency (JST), PRESTO Researcher, 2010/10 - 2014/03
Saga University, Graduate School of Science and Engineering, Electrical and Electronic Engineering  Electrical and Electronic Engineering, Professor, 2015/10 - *
Field of specialization Electron/electric material engineering, Energy studies
Membership in 
Academic Societies
IEEE, The Japanese Society for Synchrotron Radiation Research, The Japan Society of Applied Physics , The Institute of Electrical Engineers of Japan
Awards JAMS-CS AWARD(2009/09)
Themes for Ongoing Research Intermediate band solar cells based on highly mismatched alloys
Development of Green light emitting diode based on ZnTe
Development of high-efficiency CZTS solar cells
Research Themes in the Past Development of novel semiconductor processes and material characterizations using synchrotron radiation
Research Topics and Results
  1. Compositional dependence of optical transition energies in highly mismatched Zn1-xCdxTe1-yOy alloys 2016
  2. Influence of Processing Conditions on the Performance of Cu2ZnSnS4 Nanocrystal Solar Cells 2016
  3. Two-photon absorption in GaAs1-x-yPyNx intermediate-band solar cells 2015
  4. Effects of a semiconductor matrix on the band anticrossing in dilute group II-VI oxides 2015
  5. Mild solvothermal synthesis of Cu2ZnSn(SxSe1-x)4 nanocrystals with tunable phase structure and composition 2015
  6. Synthesis of Copper−Antimony-Sulfide Nanocrystals for Solution-Processed Solar Cells 2015
  7. Multicolor Electroluminescence from Intermediate Band Solar Cell Structures 2015
  8. ZnTe基板上へのClドープCdTe薄膜のMBE成長 2015
  9. MBEによる高不整合材料ZnCdTeO薄膜の成長 2015
  10. ZnTeO-based intermediate band solar cells using MBE-grown n-type ZnS layers 2014
  11. n-ZnS窓層を用いたZnTeO中間バンド型太陽電池の特性評価 2014
  12. ZnTe基板上へのZnCdTeO薄膜のMBE成長と評価 2014
  13. MOVPE法によるm-planeサファイア基板上へのZnTeヘテロエピタキシャル成長の基板温度依存性 2014
  14. n型ZnS窓層を用いたZnTe太陽電池の作製とアニール効果 2014
  15. Recent progress of ZnTe-based optoelectronic devices (Invited lecture) 2014
  16. 多源蒸着法によるCu2SnSe3の作製と評価 2014
  17. Cu2ZnSn(S,Se)4薄膜太陽電池応用を目指したZnO:Alおよびi-ZnO薄膜の作製と評価 2014
  18. 分子線エピタキシ一法によるZnTe基阪上へのClドープCdTe層の成長 2014
  19. Multiple bandgap semiconductor ZnTeO for intermediate band solar cells 2014
  20. Carrier dynamics in dilute II-VI oxide highly-mismatched alloys 2014
  21. Photogenerated current by two-step photon excitation in ZnTeO Intermediate Band Solar Cells with n-ZnO window layer 2014
  22. Carrier dynamics in dilute II-VI oxide highly-mismatched alloys (Invited Paper) 2014
  23.  2014
  24. ZnTeO-based intermediate band solar cells (Invited) 2014
  25. Cu2ZnSnS4 alloys synthesized from Cu2SnS3@ZnS nanoparticles via a facile hydrothermal approach 2014
  26. INTERMEDIATE BAND SOLAR CELLS BASED ON HIGHLY MISMATCHED ZNTEO ALLOYS 2014
  27. Intermediate band solar cells based on ZnTeO epilayer with n-ZnS blocking layer 2014
  28. Optical properties of ZnTe/ZnMgTe multiple quantum wells for optoelectronic device applications 2014
  29.  2013
  30. Development of ZnTe-based solar cells 2013
  31. Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells 2013
  32. Photocurrent induced by two-photon excitation in ZnTeO intermediate band solar cells 2013
  33. Photogenerated current by two-step photon excitation in ZnTeO Intermediate Band Solar Cells 2013
  34.  2013
  35.  2013
  36.  2013
  37. Photovoltaic research activity at Saga University (Invited lecture) 2013
  38. Intermediate band solar cells based on ZnTeO (Invited Talk) 2013
  39. Synthesis of the Cu2ZnSn(S,Se)4 alloys with tunable phase structure and composition via a novel non-toxic solution method 2013
  40. Recombination dynamics and carrier lifetimes in highly mismatched ZnTeO alloys 2013
  41. Solution-Processed Cu2ZnSnS4 Nanocrystal Solar Cells: Efficient Stripping of Surface Insulating Layers using Alkylating Agents 2013
  42. Molecular beam epitaxy of n-ZnS epilayers for ZnTe solar cell application 2013
  43. Growth and characterization of ZnMgSeTe epilayers on ZnTe substrates by molecular beam epitaxy 2013
  44. Two-step photon absorption in intermediate band solar cells based on ZnTeO 2013
  45. Synthesis of the Cu2ZnSn(S,Se)4 Powder with Tunable Phase Structure and Composition via a Novel Non-Toxic Solution Method 2013
  46. Effect of KCN-Etching on Photovoltaic Properties of Cu2ZnSnSe4 Thin Film Solar Cell 2013
  47. Growth of n-type ZnS blocking epilayers for ZnTeO-based intermediate band solar cells 2013
  48. Development of ZnTeO-based Intermediate band solar cells (invited) 2013
  49. Molecular Beam Epitaxial Growth of N-Type ZnS Layers for ZnTeO-Based Intermediate Band Solar Cells 2013
  50.  2013
  51.  2013
  52.  2013
  53.  2013
  54.  2013
  55.  2013
  56. Effects of substrate temperature upon the properties of ZnMgTe layer grown by MOVPE 2012
  57. Molecular beam epitaxial growth and optical properties of highly mismatched ZnTe1-xOx alloys 2012
  58. Growth of ZnTe layers on (111) GaAs substrates by metalorganic vapor phase epitaxy 2012
  59. Enhanced Efficiency of ZnTe-Based Green Light-Emitting Diodes 2012
  60. Existence and removal of Cu2Se second phase in coevaporated Cu2ZnSnSe4 thin films 2012
  61. ZnCdTeOのMBE成長と物性評価 2012
  62. Synthesis of multiple-bandgap semiconductor for intermediate-band solar cells 2012
  63. Green LEDs and Solar Cells based on ZnTe-related Materials (Invited) 2012
  64. Influence of dopant transport rate upon photoluminescence and electrical properties of phosphorus-doped ZnMgTe layers grown by MOVPE 2012
  65.  2012
  66.  2012
  67.  2012
  68. Synthesis and Optical Properties of ZnTe1-xOx Highly Mismatched Alloys for Intermediate Band Solar Cells 2012
  69. Development of ZnTe-based solar cells 2012
  70. Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells 2012
  71. Synthesis of Cu2ZnSnS4 nanocrystals and fabrication of thin films for photovoltaic application 2012
  72. Fabrication of CZTS based Solar Cells Using Nanocrystals 2012
  73.  2012
  74.  2012
  75.  2012
  76.  2012
  77.  2012
  78.  2012
  79.  2012
  80.  2012
  81.  2012
  82.  2011
  83.  2011
  84. Growth of ZnTe nanowires by molecular beam exitaxy 2011
  85.  2011
  86. Temperature dependence of electrical properties for P-doped ZnMgTe bulk crystals of high quality grown by Bridgman method 2011
  87. Electronic structure of GaInN semiconductors investigated by x-ray absorption spectroscopy 2011
  88. Demonstration of ZnTe1-xOx Intermediate Band Solar Cell 2011
  89. Effect of VI/II ratio upon photoluminescence and electrical properties of phosphorus-doped ZnTe films grown by metalorganic vapor phase epitaxy 2011
  90. Crystal growth and doping of ZnTe-based materials for optoelectronic applications 2011
  91. Photo-modulated Reflectance of GaNAs Grown by Atomic Hydrogen-assisted MBE 2011
  92. DEVELOPMENT OF INTERMEDIATE BAND SOLAR CELL BASED ON ZNTE1-xOx SYNTHESIZED BY OXYGEN ION IMPLANTATION 2011
  93. Optical Characterization of ZnTeO Intermediate Band Solar Cells 2011
  94. MOLECULAR BEAM EPITAXIAL GROWTH OF ZnTe1-XOX LAYERS FOR INTERMEDIATE BAND SOLAR CELL APPLICATIONS 2011
  95. COMPOSITION DEPENDENCE OF ELECTRICAL PROPERTIES OF CU2ZNSNSE4 THIN FILMS FABRICATED BY CO-EVAPORATION 2011
  96. INHOMOGENEITY IN THE PHOTOREFLECTANCE OF GANAS GROWN BY ATOMIC H-ASSISTED MBE 2011
  97. 酸素イオン注入により形成したZnTeOの光学特性と中間バンド太陽電池応用 2011
  98. 分子線エピタキシー法により形成したZnTeO薄膜の光学特性 2011
  99. ZnTeO薄膜の分子線エピタキシャル成長と評価 2011
  100. Cu2ZnSnSe4薄膜におけるCu2Se相の選択エッチングに関する研究 2011
  101. 透明導電膜を用いたZnTe太陽電池の作製と評価 2011
  102. MBE法によるZnCdTe成長と物性評価 2011
  103. 酸素イオン注入により作製したZnTeO薄膜の評価 2011
  104. Development of ZnTe Green LED at Saga University 2010
  105. Influence of composition ratio on properties of Cu2ZnSnS4 thin films fabricated by co-evaporation 2010
  106. Demonstration of homojunction ZnTe solar cells 2010
  107. Development of ZnTe1-xOx intermediate band solar cells 2010
  108. Preparation of Cu(In,Ga)Se2 thin films with Ga content of around 0.8 and their solar cell application 2010
  109.  2010
  110.  2010
  111.  2010
  112.  2010
  113.  2010
  114.  2010
  115.  2010
  116.  2010
  117. Growth of ZnTe nanowires by molecular beam exitaxy 2010
  118. Recent Progress in ZnTe-based green LED 2009
  119.  2009
  120. Surface morphology and optical properties of ZnTe epilayers on GaAs substrates by metalorganic vapor phase epitaxy 2009
  121. ZnTe based light emitting diodes fabricated by solid-state diffusion of Al through an Al oxide layer 2009
  122.  2009
  123.  2009
  124.  2009
  125.  2009
  126. Heteroepitaxial growth of InN layers on (111) silicon substrates 2009
  127. Improvement in the Quality of ZnTe Epilayers Grown on GaAs Substrates by Introducing a Low-temperature Buffer Layer 2009
  128. Enhanced light output from ZnTe light emitting diodes by utilizing thin film structure 2009
  129. Development of optoelectronic devices based on ZnTe 2009
  130. Growth and characterization of ZnTe for pure-green light emitting diodes and terahertz devices (Invited Lecture) 2009
  131. Growth of InGaN films by reactive sputtering 2009
  132. Characterization of Cu2ZnSnS4 thin film fabricated by co-evaporation 2009
  133. Cu(In,Ga)Se2 thin films with high Ga/III ratio prepared by sequential evaporation from ternary compounds and their solar cell applications 2009
  134. Effects of growth parameters on surface roughness of rf magnetron sputtered Al films 2009
  135. Influence of low-temperature buffer layer on properties of ZnTe grown on GaAs substrates 2009
  136. Temperature dependence of photoluminescence from P-doped ZnMgTe bulk crystals of high quality grown by Bridgman method 2009
  137. Growth of low-resistivity p-type ZnMgTe layers by MOVPE 2009
  138. Buffer Layer Effects on Properties of ZnTe for Terahertz Device Application 2009
  139.  2009
  140.  2009
  141.  2009
  142.  2009
  143.  2009
  144.  2009
  145.  2009
  146.  2009
  147.  2009
  148.  2009
  149.  2009
  150. Post-annealing effect upon electrical and optical properties of MOVPE grown P-doped ZnTe homoepitaxial layers 2009
  151. Fabrication of a ZnTe light emitting diode by Al thermal diffusion into a p-ZnTe epitaxial layer on a p-ZnMgTe substrate 2009
  152. Fabrication of ZnTe Light Emitting Diode by Al Thermal Diffusion through Surface Oxidation Layer 2008
  153. Influence of precursor transport rate upon the optical and electrical properties of P-ZnTe homoepilayer grown by MOVPE system 2008
  154. Optical Properties of ZnTe Grown on Sapphire Substrates 2008
  155. Epitaxial Growth and Characterization of AlInN Layers for Multi-Junction Tandem Solar Cells (Invited) 2008
  156. Heteroepitaxial growth of InN thin films on (111) silicon substrates 2008
  157. Optical Properties of ZnTe epilayers on GaAs substrate by metalorganic vapor phase epitaxy 2008
  158. Optoelectronics research in Saga University VBL 2008
  159.  2008
  160.  2008
  161.  2008
  162.  2008
  163.  2008
  164.  2008
  165.  2008
  166.  2008
  167.  2008
  168.  2008
  169.  2008
  170.  2008
  171. Structural and Optical Properties of AlInN Films Grown on Sapphire Substrates, 2008
  172. Epitaxial growth of ZnMgTe with a wide composition range on ZnTe substrate by molecular beam epitaxy 2008
  173. Improvement of MOVPE grown ZnTe:P layers by annealing treatment 2008
  174. Growth of undoped ZnMgTe layers by metalorganic vapour phase epitaxy 2008
  175. Microfabrication of ZnO on PTFE Template Patterned by Synchrotron Radiation 2008
  176.  2008
  177.  2008
  178.  2008
  179. Observation of ultra-broadband terahertz emission from ZnTe films grown by metaloganic vapor epitaxy 2007
  180. Design of Beamline BL9 at Saga Light Source 2007
  181.  2007
  182. Effects of dopant transport rate upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethlaminophosphorus 2007
  183. Growth characteristics of ZnMgTe layer on ZnTe substrate by metalorganic vapor phase epitaxy 2007
  184. Low-pressure metalorganic vapor phase epitaxy growth of ZnTe 2007
  185. Growth and characterization of ZnTe epilayers on (100) GaAs substrates by metalorganic vapor phase epitaxy 2007
  186. Effects of Sapphire Substrate Preparation on ZnO Epitaxial Growth by Atmospheric-Pressure Metal Organic Chemical Vapor Deposition 2007
  187. Structural and Optical Properties of ZnMgO Films Grown by Metal Organic Decomposition 2007
  188.  2007
  189. FABRICATION OF MICRO-ARRAY OF ZINC OXIDE SEMICONDUCTORS 2007
  190. Characterization of Al-doped ZnTe layer fabricated by Al thermal diffusion 2007
  191. Reactive sputter deposition of AlInN thin films 2007
  192. Study of Al thermal diffusion in ZnTe by secondary ion mass spectroscopy 2007
  193. Post-annealing effect upon phosphorus-doped ZnTe homoepitaxial layers grown by MOVPE 2007
  194. Epitaxial Growth of Ternary AlInN on Sapphire Substrates 2007
  195. Nanofabrication of PTFE films by synchrotron radiation, 2007
  196. Epitaxial growth of ZnMgTe with a wide composition range on ZnTe substrate by molecular beam epitaxy, 2007
  197. Improvement of MOVPE grown ZnTe:P layers by annealing treatment, 2007
  198. Growth of undoped ZnMgTe layers by metalorganic vapour phase epitaxy, 2007
  199. Fabrication of ZnTe light emitting diode on p-ZnMgTe substrate by Al thermal diffusion, 2007
  200. Post-annealing effect upon electrical and optical properties of MOVPE grown P-doped ZnTe homoepitaxial layers, 2007
  201. Epitaxial growth of InN on (111) silicon substrates, 2007
  202. Microfabrication of ZnO on PTFE template patterned by synchrotron radiation, 2007
  203. Surface morphology of ZnTe:P(100) homoepitaxially grown by horizontal MOVPE technique, 2007
  204. Heteroepitaxial growth of ZnTe thin films on sapphire substrates for terahertz devices applications, 2007
  205.  2007
  206.  2007
  207. Growth Properties of Polytetrafluoroethylene Films by Synchrotron Radiation Ablation 2007
  208. Structural properties of ZnTe epilayers grown on (0001) α-Al2O3 substrates by metalorganic vapor phase epitaxy 2007
  209. EFFECT OF COMPOSITIONAL RATIO ON PROPERTIES OF CU2ZNSNS4 THIN FILM FABRICATED BY CO-EVAPORATION, 2007
  210. FUNDAMENTAL PROPERTIES OF EPITAXIAL ALINN SEMICONDUCTORS, 2007
  211.  2007
  212.  2007
  213.  2007
  214.  2007
  215.  2007
  216.  2007
  217.  2007
  218.  2007
  219.  2007
  220.  2007
  221.  2007
  222.  2007
  223.  2007
  224. Effect of surface treatment on properties of ZnTe LED fabricated by Al thermal diffusion 2006
  225. Effects of substrate temperature upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethlaminophosphorus 2006
  226. Phosphorus-doped ZnMgTe bulk crystals grown by Vertical Bridgman Method 2006
  227. Growth of Boron-Doped ZnTe Homoepitaxial Layer by Metalorganic Vapor Phase Epitaxy 2006
  228. Fabrication of stannite Cu2ZnSnS4 thin films by physical vapor deposition 2006
  229. Optical and Electrical Properties of Phosphorus-Doped ZnMgTe Bulk Crystals Grown by Bridgman Method 2006
  230. Low-pressure metalorganic vapor phase epitaxy growth of ZnTe 2006
  231. Growth Characteristics of ZnMgTe Layer on ZnTe Substrate by Metalorganic Vapor Phase Epitaxy 2006
  232. Effects of dopant transport rate upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethlaminophosphorus 2006
  233. Design of Beamline BL9 at Saga Light Source 2006
  234. Characterization of Al-doped ZnTe layer fabricated by Al thermal diffusion 2006
  235. Fabrication of Cu2ZnSnS4 thin films by co-evaporation 2006
  236. Optical and electrical properties of phosphorus-doped ZnMgTe bulk crystals grown by Bridgman method 2006
  237. Cathodoluminescence study of anodic nanochannel alumina 2006
  238. Growth properties of AlN films on sapphire substrates by reactive sputtering 2006
  239. Reactive Ion Etching of Zinc Oxide Using Methane and Hydrogen Gases [published November 8, 2006] 2006
  240. SIMS study of Al thermal diffusion in ZnTe 2006
  241. Post-annealing effect upon phosphorus-doped ZnTe homoepitaxial layers grown by MOVPE 2006
  242. Research on semiconductor materials for optoelectronic applications 2006
  243.  2006
  244.  2006
  245. Growth and Characterization of AlInN Films 2006
  246. Fabrication of ZnTe Epilayers for Terahertz Devices Applications 2006
  247. Fabrication of Zinc Oxide Microstructures Using Synchrotron Light 2006
  248. Influence of surface treatment on properties of ZnTe LED fabricated by Al thermal diffusion 2006
  249.  2006
  250.  2006
  251.  2006
  252.  2006
  253.  2006
  254.  2006
  255.  2006
  256.  2006
  257.  2006
  258.  2006
  259. Present Status and Future Prospect of Saga Synchrotron Light Project 2006
  260. Growth and Characterization of ZnTe epilayers on GaAs substrate by metalorganic vapor phase epitaxy 2006
  261. Microscopic investigations of aluminum nitride thin films grown by low-temperature reactive sputtering 2005
  262. Synchrotron radiation-excited etching of ZnTe using Ar gas 2005
  263. X-ray absorption near-edge fine structure study of AlInN semiconductors 2005
  264. Preparation of Cu2ZnSnS4 thin films by hybrid sputtering 2005
  265. Effect of surface treatment on properties of ZnTe LED fabricated by Al thermal diffusion 2005
  266. Effects of substrate temperature upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethlaminophosphorus 2005
  267. Growth of Boron-Doped ZnTe Homoepitaxial Layer by Metalorganic Vapor Phase Epitaxy 2005
  268. Growth of AlInN films for multi-junction tandem solar cells 2005
  269.  2005
  270. Observation of visible luminescence from indium nitride at room temperature 2005
  271. Recovery from Dry Etching Damage in ZnTe by Thermal Annealing 2005
  272. Strong Room-Temperature UV Luminescence from ZnO Grown by Metal Organic Decomposition Method (Brief Communication) 2005
  273.  2005
  274. Optical Properties of Anodic Nanochannel Alumina 2005
  275. Epitaxial growth properties of AlN films on sapphire substrates by reactive sputtering 2005
  276.  2005
  277.  2005
  278.  2005
  279.  2005
  280.  2005
  281.  2005
  282.  2005
  283.  2005
  284. Phosphorus-Doped ZnMgTe Bulk Crystals Grown by Vertical Bridgman Method 2005
  285.  2004
  286.  2004
  287.  2004
  288.  2004
  289. Saga Synchrotron Light and its Application for Advanced Science/Technology and Regional Development 2004
  290. Synchrotron Radiation-Excited Etching of ZnTe 2004
  291. Electroluminescence and photoluminescence characteristics in ZnTe LED fabricated by Al thermal diffusion 2004
  292. Growth of phosphorus-doped ZnTe layers by metalorganic vapour phase epitaxy using tris-dimethylaminophosphorus 2004
  293.  2004
  294. Selective Dry Etching of Zinc Telluride Using Aluminum Mask 2004
  295. Growth condition dependence of structure and surface morphology of GaN films on (111)GaAs substrates prepared by reactive sputtering 2004
  296. Synchrotron radiation-excited etching of ZnTe using Ar gas 2004
  297. Preparation of Cu2ZnSnS4 thin films by hybrid sputtering 2004
  298.  2004
  299.  2004
  300.  2004
  301.  2004
  302. Development of Synchrotron Light-Excited Process 2004
  303. Synchrotron Light-Excited Growth and Etching of Semiconductors 2004
  304.  2004
  305. Characteristics of reactive ion etching for zinc telluride 2003
  306. Effect of Cl ion implantation on electrical properties of CuInSe2 thin films 2003
  307. Effect of 8MeV electron irradiation on electrical properties of CuInSe2 thin films 2003
  308. Growth and optical properties of high-quality ZnTe homoepitaxial layers by metalorganic vapor phase epitaxy 2003
  309. Photoluminescence properties of ZnTe homoepitaxial layers grown by synchrotron-radiation-excited growth using nitrogen carrier gas 2003
  310. Fabrication of ZnTe Light-Emitting Diodes Using Bridgman-Grown Substrates 2003
  311. Photoluminescence of iodine-doped ZnTe homoepitaxial layer grown by metalorganic vapor phase epitaxy 2003
  312. Photoluminescence of Cl-doped ZnTe epitaxial layer grown by atmospheric pressure metalorganic vapor phase epitaxy 2003
  313. Synchrotron Radiation-Excited Etching of ZnTe 2003
  314. Depth dependence of photoluminescence spectra of Al thermal diffusion layer in ZnTe LED 2003
  315. Influence of Al thermal diffusion time on electroluminescence properties of ZnTe LED 2003
  316.  2003
  317. Growth properties of reactive sputtered AlInN films 2003
  318. Effect of iodine doping on photoluminescence properties of ZnTe grown by metalorganic vapor phase epitaxy 2002
  319. Photoluminescence spectra of arsenic-doped ZnTe films grown by metal organic vapor phase epitaxy (MOVPE) using triethylarsine 2002
  320.  2002
  321.  2002
  322.  2002
  323. MOVPE Growth and characterization of high quality ZnTe homoepitaxial layers 2002
  324. Photoluminescence properties of chlorine-doped ZnTe grown by metalorganic vapor phase epitaxy 2002
  325. Photoluminescence properties of ZnTe homoepitaxial films deposited by photo-excited growth using synchrotron-radiation light 2002
  326. Growth rate characteristics and photoluminescence properties of ZnTe grown by MOVPE and photo-assisted MOVPE 2001
  327. CuInSe2 and its related thin films prepared by rf sputtering and laser ablation methods 2001
  328. Effect of Substrate Position in i-ZnO Thin Film Formation to Cu(In,Ga)Se2 Solar Cell 2001
  329. Photoluminescence properties of iodine-doped ZnTe grown by metalorganic vapor phase epitaxy 2001
  330. Arsenic and Phosphor P-type Doping of Bulk ZnTe for LED Applications 2001
  331. Investigation into the influence of GaN buffer layer on crystallinity of InN 2001
  332. Growth of Arsenic-Doped ZnTe by MOVPE using Triethylarsine 2001
  333. Effect of Gas Flow Rate on Properties of ZnTe Epitaxial Layers Grown by Horizontal Metalorganic Vapor Phase Epitaxy 2001
  334. Heteroepitaxial Growth of GaN on (111)GaAs Substrates 2001
  335. Effect of 8MeV-electron irradiation on electrical properties of CuInSe2 thin films 2001
  336. Implantation of Chlorine ion into CuInSe2 thin films 2001
  337. Effect of electron irradiation on properties of CuInSe2 thin films 2000
  338. Effect of Mg ion implantation on electrical properties of CuInSe2 thin films 2000
  339. Irradiation effect of 8MeV-electron on electrical properties of CuInSe2 thin films 2000
  340. Effect of electron irradiation on properties of CuInSe2 thin films 2000
  341. Effect of substrate temperature on properties of thin films prepared by RF sputtering from CuInSe2 target with Na2Se 1999
  342. Mg ion implantation in CuInSe2 thin films 1999
  343. Characterization of Cu(In,Ga)2Se3.5 thin films prepared by rf sputtering from Cu(In,Ga)Se2 with Na2Se 1998
  344. Influence of incorporation of Na on CuInSe2 thin films 1998
  345. Preparation and characterization of (Cd,Zn)S thin films by chemical bath deposition for photovoltaic devices 1998
  346. Effect of substrate temperature on properties of thin films prepared by RF sputtering from CuInSe2 target with Na2Se 1998
  347. CHARACTERIZATION OF CuInSe2 THIN FILMS FABRICATED BY RF SPUTTERING WITH ALKALI METALS 1998
  348. Preparation of Cu(In,Ga)2Se3.5 Thin Films by RF Sputtering from stoichiometric Cu(In,Ga)Se2 target with Na2Se 1997
  349. Influence of incorporation of Na on CuInSe2 thin films 1997
  350. Preparation of ordered vacancy chalcopyrite thin films by RF sputtering from CuInSe2 target with Na2Se 1996
  351. Characterization of CuInS2 thin films prepared by sputtering from binary compounds 1996
  352. Preparation of CuInSe2 thin films with large grain by excimer laser ablation 1996
  353. Influence of annealing temperature on the properties of Cu(In,Ga)Se2 thin films by thermal crystallization in Se vapor 1996
  354. Characterization of Cu(In,Ga)2Se3.5 thin films prepared by rf sputtering from Cu(In,Ga)Se2 with Na2Se 1996
  355. (Cd,Zn)S THIN FILMS PREPARED BY CHEMICAL BATH DEPOSITION FOR PHOTOVOLTAIC DEVICES 1995
  356. FABRICATION AND CHARACTERIZATION OF CuIn(SxSe1-x)2 THIN FILMS BY RF SPUTTERING 1995
  357. Characterization of CuInSe2 thin films prepared by Excimer Laser Ablaton 1995
  358. Influence of precursor structure on the properties of Cu(In,Ga)Se2 thin fims by thermal crystallization 1995