Detailed Information
Name TANAKA, Tooru
Department Graduate School of Science and Engineering Electrical and Electronic Engineering  Electrical and Electronic Engineering
Job Title Associate Professor Degree Obtained Doctor (Engineering)(2000/03)
Master (Engineering)(1997/03)
E-mail
Homepage http://www.sc.ec.saga-u.ac.jp/en/
Research Field/Keywords for 
Research Field
semiconductor physics and devices, crystal growth
Education 1995/03, Toyohashi University of Technology, Faculty of Engineering, Department of Electrical and Electronic Engineering, Graduated
1997/03, Toyohashi University of Technology, Graduate School, Division of Engineering, Master Course, Completed
2000/03, Toyohashi University of Technology, Graduate School, Division of Engineering, Doctor Course, Completed
Employment Experience Toyohashi University of Technology, Postdoctoral Fellowships of Japan Society for the Promotion of Science, 1998/04 - 2000/03
Saga University, Faculty of Science and Engineering, Electrical and Electronic Engineering, Research Associate, 2000/04 - 2003/03
Saga University, Synchrotron Light Application Center, Research Associate, 2003/04 - 2007/03
Saga University, Synchrotron Light Application Center, Assistant Professor, 2007/04 - 2009/01
Saga University, Faculty of Science and Engineering, Electrical and Electronic Engineering Electrical and Electronic Engineering, Associate Professor , 2009/02 - 2010/03
Lawrence Berkeley National Laboratory, Visiting Scholar, 2009/10 - 2010/09
Saga University, Graduate School of Science and Engineering Electrical and Electronic Engineering, Associate Professor, 2010/04 - *
Japan Science and Technology Agency (JST), PRESTO Researcher, 2010/10 - 2014/03
Field of specialization Electron/electric material engineering, Applied physical properties/crystal engineering
Membership in 
Academic Societies
IEEE, The Japanese Society for Synchrotron Radiation Research, The Japan Society of Applied Physics (Program Committee Member of 27th International Microprocesses and Nanotechnology Conference), The Japan Society of Applied Physics , The Japan Society of Applied Physics , The Institute of Electrical Engineers of Japan
Awards JAMS-CS AWARD(2009/09)
Themes for Ongoing Research Intermediate band solar cells based on highly mismatched alloys
Development of Green light emitting diode based on ZnTe
Development of high-efficiency CZTS solar cells
Research Themes in the Past Development of novel semiconductor processes and material characterizations using synchrotron radiation
Research Topics and Results
  1. ZnTeO-based intermediate band solar cells (Invited) 2014-5
  2. Cu2ZnSnS4 alloys synthesized from Cu2SnS3@ZnS nanoparticles via a facile hydrothermal approach 2014-4
  3. Cu2ZnSnS4 alloys synthesized from Cu2SnS3@ZnS nanoparticles via a facile hydrothermal approach 2014-4
  4.  2014-3
  5. Carrier dynamics in dilute II-VI oxide highly-mismatched alloys (Invited Paper) 2014-2
  6. Photogenerated current by two-step photon excitation in ZnTeO Intermediate Band Solar Cells with n-ZnO window layer 2014-1
  7. Solution-Processed Cu2ZnSnS4 Nanocrystal Solar Cells: Efficient Stripping of Surface Insulating Layers using Alkylating Agents 2013-12
  8.  2013-12
  9. Recombination dynamics and carrier lifetimes in highly mismatched ZnTeO alloys 2013-12
  10. Molecular Beam Epitaxial Growth of N-Type ZnS Layers for ZnTeO-Based Intermediate Band Solar Cells 2013-12
  11. Development of ZnTeO-based Intermediate band solar cells (invited) 2013-11
  12.  2013-11
  13. Intermediate band solar cells based on ZnTeO (Invited Talk) 2013-11
  14.  2013-11
  15.  2013-11
  16. Effect of KCN-Etching on Photovoltaic Properties of Cu2ZnSnSe4 Thin Film Solar Cell 2013-10
  17. Growth of n-type ZnS blocking epilayers for ZnTeO-based intermediate band solar cells 2013-10
  18. Synthesis of the Cu2ZnSn(S,Se)4 alloys with tunable phase structure and composition via a novel non-toxic solution method 2013-10
  19. Synthesis of the Cu2ZnSn(S,Se)4 Powder with Tunable Phase Structure and Composition via a Novel Non-Toxic Solution Method 2013-10
  20. Growth and characterization of ZnMgSeTe epilayers on ZnTe substrates by molecular beam epitaxy 2013-9
  21. Molecular beam epitaxy of n-ZnS epilayers for ZnTe solar cell application 2013-9
  22. Two-step photon absorption in intermediate band solar cells based on ZnTeO 2013-9
  23.  2013-9
  24. Photovoltaic research activity at Saga University (Invited lecture) 2013-9
  25. Photogenerated current by two-step photon excitation in ZnTeO Intermediate Band Solar Cells 2013-6
  26.  2013-5
  27.  2013-5
  28. Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells 2013-3
  29.  2013-3
  30.  2013-3
  31. Photocurrent induced by two-photon excitation in ZnTeO intermediate band solar cells 2013-2
  32. Development of ZnTe-based solar cells 2013-2
  33.  2013
  34.  2012-12
  35.  2012-12
  36.  2012-12
  37.  2012-12
  38.  2012-12
  39.  2012-10
  40.  2012-10
  41. Fabrication of CZTS based Solar Cells Using Nanocrystals 2012-10
  42. Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells 2012-9
  43.  2012-9
  44.  2012-9
  45.  2012-9
  46. Development of ZnTe-based solar cells 2012-8
  47. Synthesis of Cu2ZnSnS4 nanocrystals and fabrication of thin films for photovoltaic application 2012-8
  48.  2012-8
  49. Synthesis and Optical Properties of ZnTe1-xOx Highly Mismatched Alloys for Intermediate Band Solar Cells 2012-6
  50. Influence of dopant transport rate upon photoluminescence and electrical properties of phosphorus-doped ZnMgTe layers grown by MOVPE 2012-5
  51.  2012-5
  52. Green LEDs and Solar Cells based on ZnTe-related Materials (Invited) 2012-5
  53. Existence and removal of Cu2Se second phase in coevaporated Cu2ZnSnSe4 thin films 2012-3
  54. ZnCdTeOのMBE成長と物性評価 2012-3
  55. Synthesis of multiple-bandgap semiconductor for intermediate-band solar cells 2012-3
  56. Growth of ZnTe layers on (111) GaAs substrates by metalorganic vapor phase epitaxy 2012-2
  57. Molecular beam epitaxial growth and optical properties of highly mismatched ZnTe1-xOx alloys 2012-1
  58. Effects of substrate temperature upon the properties of ZnMgTe layer grown by MOVPE 2012-1
  59. Enhanced Efficiency of ZnTe-Based Green Light-Emitting Diodes 2012
  60. MOLECULAR BEAM EPITAXIAL GROWTH OF ZnTe1-XOX LAYERS FOR INTERMEDIATE BAND SOLAR CELL APPLICATIONS 2011-12
  61. COMPOSITION DEPENDENCE OF ELECTRICAL PROPERTIES OF CU2ZNSNSE4 THIN FILMS FABRICATED BY CO-EVAPORATION 2011-12
  62. INHOMOGENEITY IN THE PHOTOREFLECTANCE OF GANAS GROWN BY ATOMIC H-ASSISTED MBE 2011-12
  63. 酸素イオン注入により作製したZnTeO薄膜の評価 2011-11
  64. MBE法によるZnCdTe成長と物性評価 2011-11
  65. Effect of VI/II ratio upon photoluminescence and electrical properties of phosphorus-doped ZnTe films grown by metalorganic vapor phase epitaxy 2011-11
  66. 透明導電膜を用いたZnTe太陽電池の作製と評価 2011-9
  67. Cu2ZnSnSe4薄膜におけるCu2Se相の選択エッチングに関する研究 2011-9
  68. 分子線エピタキシー法により形成したZnTeO薄膜の光学特性 2011-9
  69. ZnTeO薄膜の分子線エピタキシャル成長と評価 2011-9
  70. Optical Characterization of ZnTeO Intermediate Band Solar Cells 2011-9
  71. Demonstration of ZnTe1-xOx Intermediate Band Solar Cell 2011-7
  72. Electronic structure of GaInN semiconductors investigated by x-ray absorption spectroscopy 2011-6
  73. DEVELOPMENT OF INTERMEDIATE BAND SOLAR CELL BASED ON ZNTE1-xOx SYNTHESIZED BY OXYGEN ION IMPLANTATION 2011-6
  74. Crystal growth and doping of ZnTe-based materials for optoelectronic applications 2011-6
  75. 酸素イオン注入により形成したZnTeOの光学特性と中間バンド太陽電池応用 2011-6
  76. Temperature dependence of electrical properties for P-doped ZnMgTe bulk crystals of high quality grown by Bridgman method 2011-4
  77. Photo-modulated Reflectance of GaNAs Grown by Atomic Hydrogen-assisted MBE 2011-4
  78.  2011-3
  79. Growth of ZnTe nanowires by molecular beam exitaxy 2011-3
  80.  2011-3
  81.  2011-3
  82.  2010-11
  83.  2010-11
  84.  2010-11
  85.  2010-11
  86.  2010-9
  87.  2010-9
  88. Preparation of Cu(In,Ga)Se2 thin films with Ga content of around 0.8 and their solar cell application 2010-9
  89. Demonstration of homojunction ZnTe solar cells 2010-8
  90. Development of ZnTe1-xOx intermediate band solar cells 2010-6
  91. Influence of composition ratio on properties of Cu2ZnSnS4 thin films fabricated by co-evaporation 2010-4
  92. Growth of ZnTe nanowires by molecular beam exitaxy 2010-3
  93.  2010-3
  94.  2010-3
  95. Development of ZnTe Green LED at Saga University 2010-01
  96. Recent Progress in ZnTe-based green LED 2009-12
  97. Enhanced light output from ZnTe light emitting diodes by utilizing thin film structure 2009-12
  98.  2009-11
  99.  2009-11
  100.  2009-11
  101.  2009-11
  102.  2009-11
  103.  2009-11
  104.  2009-11
  105.  2009-11
  106.  2009-11
  107.  2009-09
  108.  2009-09
  109. Development of optoelectronic devices based on ZnTe 2009-09
  110. Buffer Layer Effects on Properties of ZnTe for Terahertz Device Application 2009-08
  111. Growth of low-resistivity p-type ZnMgTe layers by MOVPE 2009-08
  112. Improvement in the Quality of ZnTe Epilayers Grown on GaAs Substrates by Introducing a Low-temperature Buffer Layer 2009-08
  113. Influence of low-temperature buffer layer on properties of ZnTe grown on GaAs substrates 2009-08
  114. Temperature dependence of photoluminescence from P-doped ZnMgTe bulk crystals of high quality grown by Bridgman method 2009-08
  115. Cu(In,Ga)Se2 thin films with high Ga/III ratio prepared by sequential evaporation from ternary compounds and their solar cell applications 2009-07
  116. Characterization of Cu2ZnSnS4 thin film fabricated by co-evaporation 2009-07
  117. Growth of InGaN films by reactive sputtering 2009-07
  118. Heteroepitaxial growth of InN layers on (111) silicon substrates 2009-07
  119. Effects of growth parameters on surface roughness of rf magnetron sputtered Al films 2009-07
  120. Growth and characterization of ZnTe for pure-green light emitting diodes and terahertz devices (Invited Lecture) 2009-06
  121.  2009-04
  122.  2009-04
  123.  2009-03
  124. ZnTe based light emitting diodes fabricated by solid-state diffusion of Al through an Al oxide layer 2009-2
  125.  2009-1
  126. Post-annealing effect upon electrical and optical properties of MOVPE grown P-doped ZnTe homoepitaxial layers 2009-1
  127.  2009-1
  128. Fabrication of a ZnTe light emitting diode by Al thermal diffusion into a p-ZnTe epitaxial layer on a p-ZnMgTe substrate 2009-1
  129. Surface morphology and optical properties of ZnTe epilayers on GaAs substrates by metalorganic vapor phase epitaxy 2009
  130. Fabrication of ZnTe Light Emitting Diode by Al Thermal Diffusion through Surface Oxidation Layer 2008-11
  131.  2008-11
  132. Optical Properties of ZnTe Grown on Sapphire Substrates 2008-10
  133. Influence of precursor transport rate upon the optical and electrical properties of P-ZnTe homoepilayer grown by MOVPE system 2008-10
  134. Optoelectronics research in Saga University VBL 2008-10
  135.  2008-9
  136.  2008-9
  137.  2008-9
  138.  2008-9
  139. Epitaxial Growth and Characterization of AlInN Layers for Multi-Junction Tandem Solar Cells (Invited) 2008-9
  140.  2008-09
  141.  2008-08
  142.  2008-08
  143. Heteroepitaxial growth of InN thin films on (111) silicon substrates 2008-7
  144.  2008-07
  145.  2008-06
  146.  2008-06
  147. Optical Properties of ZnTe epilayers on GaAs substrate by metalorganic vapor phase epitaxy 2008-5
  148.  2008-5
  149.  2008-03
  150.  2008-03
  151.  2008-03
  152. Microfabrication of ZnO on PTFE Template Patterned by Synchrotron Radiation 2008
  153. Growth of undoped ZnMgTe layers by metalorganic vapour phase epitaxy 2008
  154. Improvement of MOVPE grown ZnTe:P layers by annealing treatment 2008
  155. Epitaxial growth of ZnMgTe with a wide composition range on ZnTe substrate by molecular beam epitaxy 2008
  156. Structural and Optical Properties of AlInN Films Grown on Sapphire Substrates, 2008
  157. EFFECT OF COMPOSITIONAL RATIO ON PROPERTIES OF CU2ZNSNS4 THIN FILM FABRICATED BY CO-EVAPORATION, 2007-12
  158. FUNDAMENTAL PROPERTIES OF EPITAXIAL ALINN SEMICONDUCTORS, 2007-12
  159.  2007-12
  160.  2007-12
  161.  2007-12
  162.  2007-12
  163.  2007-12
  164.  2007-12
  165.  2007-12
  166.  2007-12
  167.  2007-12
  168.  2007-12
  169. Heteroepitaxial growth of ZnTe thin films on sapphire substrates for terahertz devices applications, 2007-09
  170.  2007-9
  171. Surface morphology of ZnTe:P(100) homoepitaxially grown by horizontal MOVPE technique, 2007-09
  172. Microfabrication of ZnO on PTFE template patterned by synchrotron radiation, 2007-09
  173. Fabrication of ZnTe light emitting diode on p-ZnMgTe substrate by Al thermal diffusion, 2007-08
  174. Post-annealing effect upon electrical and optical properties of MOVPE grown P-doped ZnTe homoepitaxial layers, 2007-07
  175. Growth of undoped ZnMgTe layers by metalorganic vapour phase epitaxy, 2007-07
  176. Improvement of MOVPE grown ZnTe:P layers by annealing treatment, 2007-07
  177. Epitaxial growth of ZnMgTe with a wide composition range on ZnTe substrate by molecular beam epitaxy, 2007-07
  178. Epitaxial growth of InN on (111) silicon substrates, 2007-07
  179. Nanofabrication of PTFE films by synchrotron radiation, 2007-06
  180. Epitaxial Growth of Ternary AlInN on Sapphire Substrates 2007-06
  181.  2007-04
  182.  2007-03
  183.  2007-03
  184.  2007-03
  185.  2007-02
  186. FABRICATION OF MICRO-ARRAY OF ZINC OXIDE SEMICONDUCTORS 2007-01
  187. Growth characteristics of ZnMgTe layer on ZnTe substrate by metalorganic vapor phase epitaxy 2007
  188. Low-pressure metalorganic vapor phase epitaxy growth of ZnTe 2007
  189. Effects of Sapphire Substrate Preparation on ZnO Epitaxial Growth by Atmospheric-Pressure Metal Organic Chemical Vapor Deposition 2007
  190. Post-annealing effect upon phosphorus-doped ZnTe homoepitaxial layers grown by MOVPE 2007
  191. Structural properties of ZnTe epilayers grown on (0001) α-Al2O3 substrates by metalorganic vapor phase epitaxy 2007
  192. Growth Properties of Polytetrafluoroethylene Films by Synchrotron Radiation Ablation 2007
  193. Effects of dopant transport rate upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethlaminophosphorus 2007
  194. Design of Beamline BL9 at Saga Light Source 2007
  195. Structural and Optical Properties of ZnMgO Films Grown by Metal Organic Decomposition 2007
  196.  2007
  197. Growth and characterization of ZnTe epilayers on (100) GaAs substrates by metalorganic vapor phase epitaxy 2007
  198. Characterization of Al-doped ZnTe layer fabricated by Al thermal diffusion 2007
  199. Reactive sputter deposition of AlInN thin films 2007
  200. Study of Al thermal diffusion in ZnTe by secondary ion mass spectroscopy 2007
  201. Observation of ultra-broadband terahertz emission from ZnTe films grown by metaloganic vapor epitaxy 2007
  202. Fabrication of Zinc Oxide Microstructures Using Synchrotron Light 2006-11
  203.  2006-11
  204. Influence of surface treatment on properties of ZnTe LED fabricated by Al thermal diffusion 2006-11
  205.  2006-11
  206.  2006-11
  207.  2006-11
  208. Reactive Ion Etching of Zinc Oxide Using Methane and Hydrogen Gases [published November 8, 2006] 2006-11
  209.  2006-11
  210.  2006-11
  211. Fabrication of ZnTe Epilayers for Terahertz Devices Applications 2006-09
  212. Post-annealing effect upon phosphorus-doped ZnTe homoepitaxial layers grown by MOVPE 2006-09
  213.  2006-9
  214.  2006-09
  215.  2006-09
  216.  2006-09
  217.  2006-09
  218. SIMS study of Al thermal diffusion in ZnTe 2006-09
  219.  2006-08
  220. Present Status and Future Prospect of Saga Synchrotron Light Project 2006-08
  221. Characterization of Al-doped ZnTe layer fabricated by Al thermal diffusion 2006-07
  222. Research on semiconductor materials for optoelectronic applications 2006-6
  223. Growth and Characterization of AlInN Films 2006-06
  224. Design of Beamline BL9 at Saga Light Source 2006-05
  225. Effects of dopant transport rate upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethlaminophosphorus 2006-05
  226. Growth Characteristics of ZnMgTe Layer on ZnTe Substrate by Metalorganic Vapor Phase Epitaxy 2006-05
  227. Low-pressure metalorganic vapor phase epitaxy growth of ZnTe 2006-05
  228. Growth and Characterization of ZnTe epilayers on GaAs substrate by metalorganic vapor phase epitaxy 2006-05
  229. Optical and Electrical Properties of Phosphorus-Doped ZnMgTe Bulk Crystals Grown by Bridgman Method 2006-03
  230. Fabrication of stannite Cu2ZnSnS4 thin films by physical vapor deposition 2006-03
  231. Effect of surface treatment on properties of ZnTe LED fabricated by Al thermal diffusion 2006
  232. Cathodoluminescence study of anodic nanochannel alumina 2006
  233. Growth properties of AlN films on sapphire substrates by reactive sputtering 2006
  234. Growth of Boron-Doped ZnTe Homoepitaxial Layer by Metalorganic Vapor Phase Epitaxy 2006
  235. Fabrication of Cu2ZnSnS4 thin films by co-evaporation 2006
  236. Optical and electrical properties of phosphorus-doped ZnMgTe bulk crystals grown by Bridgman method 2006
  237. Effects of substrate temperature upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethlaminophosphorus 2006
  238. Phosphorus-doped ZnMgTe bulk crystals grown by Vertical Bridgman Method 2006
  239.  2005-11
  240.  2005-11
  241.  2005-11
  242.  2005-11
  243.  2005-11
  244.  2005-11
  245. Growth of AlInN films for multi-junction tandem solar cells 2005-10
  246.  2005-09
  247.  2005-09
  248. Phosphorus-Doped ZnMgTe Bulk Crystals Grown by Vertical Bridgman Method 2005-09
  249. Growth of Boron-Doped ZnTe Homoepitaxial Layer by Metalorganic Vapor Phase Epitaxy 2005-09
  250. Effects of substrate temperature upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethlaminophosphorus 2005-09
  251. Effect of surface treatment on properties of ZnTe LED fabricated by Al thermal diffusion 2005-09
  252.  2005-09
  253. Optical Properties of Anodic Nanochannel Alumina 2005-08
  254. Epitaxial growth properties of AlN films on sapphire substrates by reactive sputtering 2005-06
  255. X-ray absorption near-edge fine structure study of AlInN semiconductors 2005
  256. Preparation of Cu2ZnSnS4 thin films by hybrid sputtering 2005
  257. Observation of visible luminescence from indium nitride at room temperature 2005
  258. Microscopic investigations of aluminum nitride thin films grown by low-temperature reactive sputtering 2005
  259.  2005
  260. Strong Room-Temperature UV Luminescence from ZnO Grown by Metal Organic Decomposition Method (Brief Communication) 2005
  261. Recovery from Dry Etching Damage in ZnTe by Thermal Annealing 2005
  262. Synchrotron radiation-excited etching of ZnTe using Ar gas 2005
  263. Development of Synchrotron Light-Excited Process 2004-12
  264. Synchrotron Light-Excited Growth and Etching of Semiconductors 2004-12
  265.  2004-11
  266.  2004-10
  267. Saga Synchrotron Light and its Application for Advanced Science/Technology and Regional Development 2004-09
  268.  2004-09
  269.  2004-09
  270.  2004-09
  271.  2004-09
  272. Preparation of Cu2ZnSnS4 thin films by hybrid sputtering 2004-09
  273. Synchrotron radiation-excited etching of ZnTe using Ar gas 2004-08
  274.  2004-07
  275.  2004-07
  276.  2004
  277. Growth condition dependence of structure and surface morphology of GaN films on (111)GaAs substrates prepared by reactive sputtering 2004
  278. Synchrotron Radiation-Excited Etching of ZnTe 2004
  279.  2004
  280. Electroluminescence and photoluminescence characteristics in ZnTe LED fabricated by Al thermal diffusion 2004
  281. Growth of phosphorus-doped ZnTe layers by metalorganic vapour phase epitaxy using tris-dimethylaminophosphorus 2004
  282. Selective Dry Etching of Zinc Telluride Using Aluminum Mask 2004
  283. Influence of Al thermal diffusion time on electroluminescence properties of ZnTe LED 2003-09
  284. Depth dependence of photoluminescence spectra of Al thermal diffusion layer in ZnTe LED 2003-09
  285. Synchrotron Radiation-Excited Etching of ZnTe 2003-08
  286. Growth properties of reactive sputtered AlInN films 2003-05
  287. Fabrication of ZnTe Light-Emitting Diodes Using Bridgman-Grown Substrates 2003
  288. Photoluminescence of iodine-doped ZnTe homoepitaxial layer grown by metalorganic vapor phase epitaxy 2003
  289. Photoluminescence of Cl-doped ZnTe epitaxial layer grown by atmospheric pressure metalorganic vapor phase epitaxy 2003
  290.  2003
  291. Photoluminescence properties of ZnTe homoepitaxial layers grown by synchrotron-radiation-excited growth using nitrogen carrier gas 2003
  292. Growth and optical properties of high-quality ZnTe homoepitaxial layers by metalorganic vapor phase epitaxy 2003
  293. Effect of 8MeV electron irradiation on electrical properties of CuInSe2 thin films 2003
  294. Effect of Cl ion implantation on electrical properties of CuInSe2 thin films 2003
  295. Characteristics of reactive ion etching for zinc telluride 2003
  296. Photoluminescence properties of chlorine-doped ZnTe grown by metalorganic vapor phase epitaxy 2002-06
  297. MOVPE Growth and characterization of high quality ZnTe homoepitaxial layers 2002-06
  298. Photoluminescence properties of ZnTe homoepitaxial films deposited by photo-excited growth using synchrotron-radiation light 2002-01
  299.  2002
  300.  2002
  301.  2002
  302. Effect of iodine doping on photoluminescence properties of ZnTe grown by metalorganic vapor phase epitaxy 2002
  303. Photoluminescence spectra of arsenic-doped ZnTe films grown by metal organic vapor phase epitaxy (MOVPE) using triethylarsine 2002
  304. Effect of Substrate Position in i-ZnO Thin Film Formation to Cu(In,Ga)Se2 Solar Cell 2001-11
  305. Photoluminescence properties of iodine-doped ZnTe grown by metalorganic vapor phase epitaxy 2001-10
  306. Arsenic and Phosphor P-type Doping of Bulk ZnTe for LED Applications 2001-10
  307. Investigation into the influence of GaN buffer layer on crystallinity of InN 2001-07
  308. Growth of Arsenic-Doped ZnTe by MOVPE using Triethylarsine 2001-07
  309. Effect of Gas Flow Rate on Properties of ZnTe Epitaxial Layers Grown by Horizontal Metalorganic Vapor Phase Epitaxy 2001-07
  310. Heteroepitaxial Growth of GaN on (111)GaAs Substrates 2001-07
  311. Implantation of Chlorine ion into CuInSe2 thin films 2001-06
  312. Effect of 8MeV-electron irradiation on electrical properties of CuInSe2 thin films 2001-06
  313. CuInSe2 and its related thin films prepared by rf sputtering and laser ablation methods 2001
  314. Growth rate characteristics and photoluminescence properties of ZnTe grown by MOVPE and photo-assisted MOVPE 2001
  315. Irradiation effect of 8MeV-electron on electrical properties of CuInSe2 thin films 2000-07
  316. Effect of electron irradiation on properties of CuInSe2 thin films 2000-03
  317. Effect of electron irradiation on properties of CuInSe2 thin films 2000
  318. Effect of Mg ion implantation on electrical properties of CuInSe2 thin films 2000
  319. Mg ion implantation in CuInSe2 thin films 1999-09
  320. Effect of substrate temperature on properties of thin films prepared by RF sputtering from CuInSe2 target with Na2Se 1999
  321. Preparation and characterization of (Cd,Zn)S thin films by chemical bath deposition for photovoltaic devices 1998-08
  322. Effect of substrate temperature on properties of thin films prepared by RF sputtering from CuInSe2 target with Na2Se 1998-08
  323. CHARACTERIZATION OF CuInSe2 THIN FILMS FABRICATED BY RF SPUTTERING WITH ALKALI METALS 1998-07
  324. Influence of incorporation of Na on CuInSe2 thin films 1998
  325. Characterization of Cu(In,Ga)2Se3.5 thin films prepared by rf sputtering from Cu(In,Ga)Se2 with Na2Se 1998
  326. Influence of incorporation of Na on CuInSe2 thin films 1997-09
  327. Preparation of Cu(In,Ga)2Se3.5 Thin Films by RF Sputtering from stoichiometric Cu(In,Ga)Se2 target with Na2Se 1997
  328. Preparation of CuInSe2 thin films with large grain by excimer laser ablation 1996-11
  329. Influence of annealing temperature on the properties of Cu(In,Ga)Se2 thin films by thermal crystallization in Se vapor 1996-11
  330. Characterization of CuInS2 thin films prepared by sputtering from binary compounds 1996-11
  331. Characterization of Cu(In,Ga)2Se3.5 thin films prepared by rf sputtering from Cu(In,Ga)Se2 with Na2Se 1996-11
  332. Preparation of ordered vacancy chalcopyrite thin films by RF sputtering from CuInSe2 target with Na2Se 1996
  333. (Cd,Zn)S THIN FILMS PREPARED BY CHEMICAL BATH DEPOSITION FOR PHOTOVOLTAIC DEVICES 1995-09
  334. FABRICATION AND CHARACTERIZATION OF CuIn(SxSe1-x)2 THIN FILMS BY RF SPUTTERING 1995-09
  335. Characterization of CuInSe2 thin films prepared by Excimer Laser Ablaton 1995-09
  336. Influence of precursor structure on the properties of Cu(In,Ga)Se2 thin fims by thermal crystallization 1995-09