Detailed Information
Name TANAKA Tooru
Department Graduate School of Science and Engineering Electrical and Electronic Engineering  Electrical and Electronic Engineering
Job Title Professor Degree Obtained Doctor (Engineering)(2000/03)
Master (Engineering)(1997/03)
E-mail
Homepage http://www.sc.ec.saga-u.ac.jp/en/
Research Field/Keywords for 
Research Field
Optoelectronic devices, Semiconductor physics
Education 1995/03, Toyohashi University of Technology, Faculty of Engineering, Department of Electrical and Electronic Engineering, Graduated
1997/03, Toyohashi University of Technology, Graduate School, Division of Engineering, Master Course, Completed
2000/03, Toyohashi University of Technology, Graduate School, Division of Engineering, Doctor Course, Completed
Employment Experience Toyohashi University of Technology, Postdoctoral Fellowships of Japan Society for the Promotion of Science, 1998/04 - 2000/03
Saga University, Faculty of Science and Engineering, Electrical and Electronic Engineering, Research Associate, 2000/04 - 2003/03
Saga University, Synchrotron Light Application Center, Research Associate, 2003/04 - 2007/03
Saga University, Synchrotron Light Application Center, Assistant Professor, 2007/04 - 2009/01
Saga University, Faculty of Science and Engineering, Electrical and Electronic Engineering Electrical and Electronic Engineering, Associate Professor , 2009/02 - 2010/03
Lawrence Berkeley National Laboratory, Visiting Scholar, 2009/10 - 2010/09
Saga University, Graduate School of Science and Engineering Electrical and Electronic Engineering, Associate Professor, 2010/04 - 2015/09
Japan Science and Technology Agency (JST), PRESTO Researcher, 2010/10 - 2014/03
Saga University, Graduate School of Science and Engineering, Electrical and Electronic Engineering  Electrical and Electronic Engineering, Professor, 2015/10 - *
Field of specialization Electron/electric material engineering, Energy studies
Membership in 
Academic Societies
The Japan Society of Applied Physics (Kyushu Chapter Director), The Institute of Electrical Engineers of Japan , IEEE, The Surface Science Society of Japan, The Japanese Society for Synchrotron Radiation Research
Awards JAMS-CS AWARD(2009/09)
Themes for Ongoing Research Intermediate band solar cells based on highly mismatched alloys
Development of Green light emitting diode based on ZnTe
Development of high-efficiency CZTS solar cells
Research Themes in the Past Development of novel semiconductor processes and material characterizations using synchrotron radiation
Research Topics and Results
  1. Compositional dependence of optical transition energies in highly mismatched Zn1-xCdxTe1-yOy alloys 2016
  2. Influence of Processing Conditions on the Performance of Cu2ZnSnS4 Nanocrystal Solar Cells 2016
  3. 5. 高不整合材料による中間バンド型太陽電池の創製 2016
  4. MBE法によるClドープZnTeOの光学特性の評価 2016
  5. 分子線エピタキシー法によるZnCdO薄膜の成長と評価 2016
  6. Two-photon absorption in GaAs1-x-yPyNx intermediate-band solar cells 2015
  7. Effects of a semiconductor matrix on the band anticrossing in dilute group II-VI oxides 2015
  8. Mild solvothermal synthesis of Cu2ZnSn(SxSe1-x)4 nanocrystals with tunable phase structure and composition 2015
  9. Synthesis of Copper−Antimony-Sulfide Nanocrystals for Solution-Processed Solar Cells 2015
  10. Multicolor Electroluminescence from Intermediate Band Solar Cell Structures 2015
  11. マルチバンドギャップ半導体ZnTeOを用いた中間バンド型太陽電池の開発 2015
  12. MBEによるCl添加ZnTeO薄膜の成長と評価 2015
  13. 分子線エピタキシー法によるZnCdO薄膜の作製と評価 2015
  14. 多源蒸着法によるCu2SnSe3薄膜の作製および評価 2015
  15. MBE法によるClドープZnTeOのフォトルミネッセンス特性の評価 2015
  16. Zn1-xCdxTe薄膜のMBE成長と太陽電池への応用 2015
  17. Growth and Characterization of Highly Mismatched Zn1-xCdxTe1-yOy Alloys for Intermediate Band Solar Cells 2015
  18. Characterization of Cu2SnSe3 Thin Films Fabricated by Coevaporation 2015
  19. Multicolor Electroluminescence from Dilute Nitride Based Intermediate Band Solar Cell Structures 2015
  20. ZnTeO-related multiple bandgap semiconductors for intermediate band solar cells application (Invited lecture) 2015
  21. ZnTe基板上へのClドープCdTe薄膜のMBE成長 2015
  22. MBEによる高不整合材料ZnCdTeO薄膜の成長 2015
  23. ZnTeO-based intermediate band solar cells using MBE-grown n-type ZnS layers 2014
  24. n-ZnS窓層を用いたZnTeO中間バンド型太陽電池の特性評価 2014
  25. ZnTe基板上へのZnCdTeO薄膜のMBE成長と評価 2014
  26. MOVPE法によるm-planeサファイア基板上へのZnTeヘテロエピタキシャル成長の基板温度依存性 2014
  27. n型ZnS窓層を用いたZnTe太陽電池の作製とアニール効果 2014
  28. Recent progress of ZnTe-based optoelectronic devices (Invited lecture) 2014
  29. 多源蒸着法によるCu2SnSe3の作製と評価 2014
  30. Cu2ZnSn(S,Se)4薄膜太陽電池応用を目指したZnO:Alおよびi-ZnO薄膜の作製と評価 2014
  31. 分子線エピタキシ一法によるZnTe基阪上へのClドープCdTe層の成長 2014
  32. Multiple bandgap semiconductor ZnTeO for intermediate band solar cells 2014
  33. Carrier dynamics in dilute II-VI oxide highly-mismatched alloys 2014
  34. Photogenerated current by two-step photon excitation in ZnTeO Intermediate Band Solar Cells with n-ZnO window layer 2014
  35. Carrier dynamics in dilute II-VI oxide highly-mismatched alloys (Invited Paper) 2014
  36.  2014
  37. ZnTeO-based intermediate band solar cells (Invited) 2014
  38. Cu2ZnSnS4 alloys synthesized from Cu2SnS3@ZnS nanoparticles via a facile hydrothermal approach 2014
  39. INTERMEDIATE BAND SOLAR CELLS BASED ON HIGHLY MISMATCHED ZNTEO ALLOYS 2014
  40. Intermediate band solar cells based on ZnTeO epilayer with n-ZnS blocking layer 2014
  41. Optical properties of ZnTe/ZnMgTe multiple quantum wells for optoelectronic device applications 2014
  42.  2013
  43. Development of ZnTe-based solar cells 2013
  44. Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells 2013
  45. Photocurrent induced by two-photon excitation in ZnTeO intermediate band solar cells 2013
  46. Photogenerated current by two-step photon excitation in ZnTeO Intermediate Band Solar Cells 2013
  47.  2013
  48.  2013
  49.  2013
  50. Photovoltaic research activity at Saga University (Invited lecture) 2013
  51. Intermediate band solar cells based on ZnTeO (Invited Talk) 2013
  52. Synthesis of the Cu2ZnSn(S,Se)4 alloys with tunable phase structure and composition via a novel non-toxic solution method 2013
  53. Recombination dynamics and carrier lifetimes in highly mismatched ZnTeO alloys 2013
  54. Solution-Processed Cu2ZnSnS4 Nanocrystal Solar Cells: Efficient Stripping of Surface Insulating Layers using Alkylating Agents 2013
  55. Molecular beam epitaxy of n-ZnS epilayers for ZnTe solar cell application 2013
  56. Growth and characterization of ZnMgSeTe epilayers on ZnTe substrates by molecular beam epitaxy 2013
  57. Two-step photon absorption in intermediate band solar cells based on ZnTeO 2013
  58. Synthesis of the Cu2ZnSn(S,Se)4 Powder with Tunable Phase Structure and Composition via a Novel Non-Toxic Solution Method 2013
  59. Effect of KCN-Etching on Photovoltaic Properties of Cu2ZnSnSe4 Thin Film Solar Cell 2013
  60. Growth of n-type ZnS blocking epilayers for ZnTeO-based intermediate band solar cells 2013
  61. Development of ZnTeO-based Intermediate band solar cells (invited) 2013
  62. Molecular Beam Epitaxial Growth of N-Type ZnS Layers for ZnTeO-Based Intermediate Band Solar Cells 2013
  63.  2013
  64.  2013
  65.  2013
  66.  2013
  67.  2013
  68.  2013
  69. Effects of substrate temperature upon the properties of ZnMgTe layer grown by MOVPE 2012
  70. Molecular beam epitaxial growth and optical properties of highly mismatched ZnTe1-xOx alloys 2012
  71. Growth of ZnTe layers on (111) GaAs substrates by metalorganic vapor phase epitaxy 2012
  72. Enhanced Efficiency of ZnTe-Based Green Light-Emitting Diodes 2012
  73. Existence and removal of Cu2Se second phase in coevaporated Cu2ZnSnSe4 thin films 2012
  74. ZnCdTeOのMBE成長と物性評価 2012
  75. Synthesis of multiple-bandgap semiconductor for intermediate-band solar cells 2012
  76. Green LEDs and Solar Cells based on ZnTe-related Materials (Invited) 2012
  77. Influence of dopant transport rate upon photoluminescence and electrical properties of phosphorus-doped ZnMgTe layers grown by MOVPE 2012
  78.  2012
  79.  2012
  80.  2012
  81. Synthesis and Optical Properties of ZnTe1-xOx Highly Mismatched Alloys for Intermediate Band Solar Cells 2012
  82. Development of ZnTe-based solar cells 2012
  83. Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells 2012
  84. Synthesis of Cu2ZnSnS4 nanocrystals and fabrication of thin films for photovoltaic application 2012
  85. Fabrication of CZTS based Solar Cells Using Nanocrystals 2012
  86.  2012
  87.  2012
  88.  2012
  89.  2012
  90.  2012
  91.  2012
  92.  2012
  93.  2012
  94.  2012
  95.  2011
  96.  2011
  97. Growth of ZnTe nanowires by molecular beam exitaxy 2011
  98.  2011
  99. Temperature dependence of electrical properties for P-doped ZnMgTe bulk crystals of high quality grown by Bridgman method 2011
  100. Electronic structure of GaInN semiconductors investigated by x-ray absorption spectroscopy 2011
  101. Demonstration of ZnTe1-xOx Intermediate Band Solar Cell 2011
  102. Effect of VI/II ratio upon photoluminescence and electrical properties of phosphorus-doped ZnTe films grown by metalorganic vapor phase epitaxy 2011
  103. Crystal growth and doping of ZnTe-based materials for optoelectronic applications 2011
  104. Photo-modulated Reflectance of GaNAs Grown by Atomic Hydrogen-assisted MBE 2011
  105. DEVELOPMENT OF INTERMEDIATE BAND SOLAR CELL BASED ON ZNTE1-xOx SYNTHESIZED BY OXYGEN ION IMPLANTATION 2011
  106. Optical Characterization of ZnTeO Intermediate Band Solar Cells 2011
  107. MOLECULAR BEAM EPITAXIAL GROWTH OF ZnTe1-XOX LAYERS FOR INTERMEDIATE BAND SOLAR CELL APPLICATIONS 2011
  108. COMPOSITION DEPENDENCE OF ELECTRICAL PROPERTIES OF CU2ZNSNSE4 THIN FILMS FABRICATED BY CO-EVAPORATION 2011
  109. INHOMOGENEITY IN THE PHOTOREFLECTANCE OF GANAS GROWN BY ATOMIC H-ASSISTED MBE 2011
  110. 酸素イオン注入により形成したZnTeOの光学特性と中間バンド太陽電池応用 2011
  111. 分子線エピタキシー法により形成したZnTeO薄膜の光学特性 2011
  112. ZnTeO薄膜の分子線エピタキシャル成長と評価 2011
  113. Cu2ZnSnSe4薄膜におけるCu2Se相の選択エッチングに関する研究 2011
  114. 透明導電膜を用いたZnTe太陽電池の作製と評価 2011
  115. MBE法によるZnCdTe成長と物性評価 2011
  116. 酸素イオン注入により作製したZnTeO薄膜の評価 2011
  117. Development of ZnTe Green LED at Saga University 2010
  118. Influence of composition ratio on properties of Cu2ZnSnS4 thin films fabricated by co-evaporation 2010
  119. Demonstration of homojunction ZnTe solar cells 2010
  120. Development of ZnTe1-xOx intermediate band solar cells 2010
  121. Preparation of Cu(In,Ga)Se2 thin films with Ga content of around 0.8 and their solar cell application 2010
  122.  2010
  123.  2010
  124.  2010
  125.  2010
  126.  2010
  127.  2010
  128.  2010
  129.  2010
  130. Growth of ZnTe nanowires by molecular beam exitaxy 2010
  131. Recent Progress in ZnTe-based green LED 2009
  132.  2009
  133. Surface morphology and optical properties of ZnTe epilayers on GaAs substrates by metalorganic vapor phase epitaxy 2009
  134. ZnTe based light emitting diodes fabricated by solid-state diffusion of Al through an Al oxide layer 2009
  135.  2009
  136.  2009
  137.  2009
  138.  2009
  139. Heteroepitaxial growth of InN layers on (111) silicon substrates 2009
  140. Improvement in the Quality of ZnTe Epilayers Grown on GaAs Substrates by Introducing a Low-temperature Buffer Layer 2009
  141. Enhanced light output from ZnTe light emitting diodes by utilizing thin film structure 2009
  142. Development of optoelectronic devices based on ZnTe 2009
  143. Growth and characterization of ZnTe for pure-green light emitting diodes and terahertz devices (Invited Lecture) 2009
  144. Growth of InGaN films by reactive sputtering 2009
  145. Characterization of Cu2ZnSnS4 thin film fabricated by co-evaporation 2009
  146. Cu(In,Ga)Se2 thin films with high Ga/III ratio prepared by sequential evaporation from ternary compounds and their solar cell applications 2009
  147. Effects of growth parameters on surface roughness of rf magnetron sputtered Al films 2009
  148. Influence of low-temperature buffer layer on properties of ZnTe grown on GaAs substrates 2009
  149. Temperature dependence of photoluminescence from P-doped ZnMgTe bulk crystals of high quality grown by Bridgman method 2009
  150. Growth of low-resistivity p-type ZnMgTe layers by MOVPE 2009
  151. Buffer Layer Effects on Properties of ZnTe for Terahertz Device Application 2009
  152.  2009
  153.  2009
  154.  2009
  155.  2009
  156.  2009
  157.  2009
  158.  2009
  159.  2009
  160.  2009
  161.  2009
  162.  2009
  163. Post-annealing effect upon electrical and optical properties of MOVPE grown P-doped ZnTe homoepitaxial layers 2009
  164. Fabrication of a ZnTe light emitting diode by Al thermal diffusion into a p-ZnTe epitaxial layer on a p-ZnMgTe substrate 2009
  165. Fabrication of ZnTe Light Emitting Diode by Al Thermal Diffusion through Surface Oxidation Layer 2008
  166. Influence of precursor transport rate upon the optical and electrical properties of P-ZnTe homoepilayer grown by MOVPE system 2008
  167. Optical Properties of ZnTe Grown on Sapphire Substrates 2008
  168. Epitaxial Growth and Characterization of AlInN Layers for Multi-Junction Tandem Solar Cells (Invited) 2008
  169. Heteroepitaxial growth of InN thin films on (111) silicon substrates 2008
  170. Optical Properties of ZnTe epilayers on GaAs substrate by metalorganic vapor phase epitaxy 2008
  171. Optoelectronics research in Saga University VBL 2008
  172.  2008
  173.  2008
  174.  2008
  175.  2008
  176.  2008
  177.  2008
  178.  2008
  179.  2008
  180.  2008
  181.  2008
  182.  2008
  183.  2008
  184. Structural and Optical Properties of AlInN Films Grown on Sapphire Substrates, 2008
  185. Epitaxial growth of ZnMgTe with a wide composition range on ZnTe substrate by molecular beam epitaxy 2008
  186. Improvement of MOVPE grown ZnTe:P layers by annealing treatment 2008
  187. Growth of undoped ZnMgTe layers by metalorganic vapour phase epitaxy 2008
  188. Microfabrication of ZnO on PTFE Template Patterned by Synchrotron Radiation 2008
  189.  2008
  190.  2008
  191.  2008
  192. Observation of ultra-broadband terahertz emission from ZnTe films grown by metaloganic vapor epitaxy 2007
  193. Design of Beamline BL9 at Saga Light Source 2007
  194.  2007
  195. Effects of dopant transport rate upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethlaminophosphorus 2007
  196. Growth characteristics of ZnMgTe layer on ZnTe substrate by metalorganic vapor phase epitaxy 2007
  197. Low-pressure metalorganic vapor phase epitaxy growth of ZnTe 2007
  198. Growth and characterization of ZnTe epilayers on (100) GaAs substrates by metalorganic vapor phase epitaxy 2007
  199. Effects of Sapphire Substrate Preparation on ZnO Epitaxial Growth by Atmospheric-Pressure Metal Organic Chemical Vapor Deposition 2007
  200. Structural and Optical Properties of ZnMgO Films Grown by Metal Organic Decomposition 2007
  201.  2007
  202. FABRICATION OF MICRO-ARRAY OF ZINC OXIDE SEMICONDUCTORS 2007
  203. Characterization of Al-doped ZnTe layer fabricated by Al thermal diffusion 2007
  204. Reactive sputter deposition of AlInN thin films 2007
  205. Study of Al thermal diffusion in ZnTe by secondary ion mass spectroscopy 2007
  206. Post-annealing effect upon phosphorus-doped ZnTe homoepitaxial layers grown by MOVPE 2007
  207. Epitaxial Growth of Ternary AlInN on Sapphire Substrates 2007
  208. Nanofabrication of PTFE films by synchrotron radiation, 2007
  209. Epitaxial growth of ZnMgTe with a wide composition range on ZnTe substrate by molecular beam epitaxy, 2007
  210. Improvement of MOVPE grown ZnTe:P layers by annealing treatment, 2007
  211. Growth of undoped ZnMgTe layers by metalorganic vapour phase epitaxy, 2007
  212. Fabrication of ZnTe light emitting diode on p-ZnMgTe substrate by Al thermal diffusion, 2007
  213. Post-annealing effect upon electrical and optical properties of MOVPE grown P-doped ZnTe homoepitaxial layers, 2007
  214. Epitaxial growth of InN on (111) silicon substrates, 2007
  215. Microfabrication of ZnO on PTFE template patterned by synchrotron radiation, 2007
  216. Surface morphology of ZnTe:P(100) homoepitaxially grown by horizontal MOVPE technique, 2007
  217. Heteroepitaxial growth of ZnTe thin films on sapphire substrates for terahertz devices applications, 2007
  218.  2007
  219.  2007
  220. Growth Properties of Polytetrafluoroethylene Films by Synchrotron Radiation Ablation 2007
  221. Structural properties of ZnTe epilayers grown on (0001) α-Al2O3 substrates by metalorganic vapor phase epitaxy 2007
  222. EFFECT OF COMPOSITIONAL RATIO ON PROPERTIES OF CU2ZNSNS4 THIN FILM FABRICATED BY CO-EVAPORATION, 2007
  223. FUNDAMENTAL PROPERTIES OF EPITAXIAL ALINN SEMICONDUCTORS, 2007
  224.  2007
  225.  2007
  226.  2007
  227.  2007
  228.  2007
  229.  2007
  230.  2007
  231.  2007
  232.  2007
  233.  2007
  234.  2007
  235.  2007
  236.  2007
  237. Effect of surface treatment on properties of ZnTe LED fabricated by Al thermal diffusion 2006
  238. Effects of substrate temperature upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethlaminophosphorus 2006
  239. Phosphorus-doped ZnMgTe bulk crystals grown by Vertical Bridgman Method 2006
  240. Growth of Boron-Doped ZnTe Homoepitaxial Layer by Metalorganic Vapor Phase Epitaxy 2006
  241. Fabrication of stannite Cu2ZnSnS4 thin films by physical vapor deposition 2006
  242. Optical and Electrical Properties of Phosphorus-Doped ZnMgTe Bulk Crystals Grown by Bridgman Method 2006
  243. Low-pressure metalorganic vapor phase epitaxy growth of ZnTe 2006
  244. Growth Characteristics of ZnMgTe Layer on ZnTe Substrate by Metalorganic Vapor Phase Epitaxy 2006
  245. Effects of dopant transport rate upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethlaminophosphorus 2006
  246. Design of Beamline BL9 at Saga Light Source 2006
  247. Characterization of Al-doped ZnTe layer fabricated by Al thermal diffusion 2006
  248. Fabrication of Cu2ZnSnS4 thin films by co-evaporation 2006
  249. Optical and electrical properties of phosphorus-doped ZnMgTe bulk crystals grown by Bridgman method 2006
  250. Cathodoluminescence study of anodic nanochannel alumina 2006
  251. Growth properties of AlN films on sapphire substrates by reactive sputtering 2006
  252. Reactive Ion Etching of Zinc Oxide Using Methane and Hydrogen Gases [published November 8, 2006] 2006
  253. SIMS study of Al thermal diffusion in ZnTe 2006
  254. Post-annealing effect upon phosphorus-doped ZnTe homoepitaxial layers grown by MOVPE 2006
  255. Research on semiconductor materials for optoelectronic applications 2006
  256.  2006
  257.  2006
  258. Growth and Characterization of AlInN Films 2006
  259. Fabrication of ZnTe Epilayers for Terahertz Devices Applications 2006
  260. Fabrication of Zinc Oxide Microstructures Using Synchrotron Light 2006
  261. Influence of surface treatment on properties of ZnTe LED fabricated by Al thermal diffusion 2006
  262.  2006
  263.  2006
  264.  2006
  265.  2006
  266.  2006
  267.  2006
  268.  2006
  269.  2006
  270.  2006
  271.  2006
  272. Present Status and Future Prospect of Saga Synchrotron Light Project 2006
  273. Growth and Characterization of ZnTe epilayers on GaAs substrate by metalorganic vapor phase epitaxy 2006
  274. Microscopic investigations of aluminum nitride thin films grown by low-temperature reactive sputtering 2005
  275. Synchrotron radiation-excited etching of ZnTe using Ar gas 2005
  276. X-ray absorption near-edge fine structure study of AlInN semiconductors 2005
  277. Preparation of Cu2ZnSnS4 thin films by hybrid sputtering 2005
  278. Effect of surface treatment on properties of ZnTe LED fabricated by Al thermal diffusion 2005
  279. Effects of substrate temperature upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethlaminophosphorus 2005
  280. Growth of Boron-Doped ZnTe Homoepitaxial Layer by Metalorganic Vapor Phase Epitaxy 2005
  281. Growth of AlInN films for multi-junction tandem solar cells 2005
  282.  2005
  283. Observation of visible luminescence from indium nitride at room temperature 2005
  284. Recovery from Dry Etching Damage in ZnTe by Thermal Annealing 2005
  285. Strong Room-Temperature UV Luminescence from ZnO Grown by Metal Organic Decomposition Method (Brief Communication) 2005
  286.  2005
  287. Optical Properties of Anodic Nanochannel Alumina 2005
  288. Epitaxial growth properties of AlN films on sapphire substrates by reactive sputtering 2005
  289.  2005
  290.  2005
  291.  2005
  292.  2005
  293.  2005
  294.  2005
  295.  2005
  296.  2005
  297. Phosphorus-Doped ZnMgTe Bulk Crystals Grown by Vertical Bridgman Method 2005
  298.  2004
  299.  2004
  300.  2004
  301.  2004
  302. Saga Synchrotron Light and its Application for Advanced Science/Technology and Regional Development 2004
  303. Synchrotron Radiation-Excited Etching of ZnTe 2004
  304. Electroluminescence and photoluminescence characteristics in ZnTe LED fabricated by Al thermal diffusion 2004
  305. Growth of phosphorus-doped ZnTe layers by metalorganic vapour phase epitaxy using tris-dimethylaminophosphorus 2004
  306.  2004
  307. Selective Dry Etching of Zinc Telluride Using Aluminum Mask 2004
  308. Growth condition dependence of structure and surface morphology of GaN films on (111)GaAs substrates prepared by reactive sputtering 2004
  309. Synchrotron radiation-excited etching of ZnTe using Ar gas 2004
  310. Preparation of Cu2ZnSnS4 thin films by hybrid sputtering 2004
  311.  2004
  312.  2004
  313.  2004
  314.  2004
  315. Development of Synchrotron Light-Excited Process 2004
  316. Synchrotron Light-Excited Growth and Etching of Semiconductors 2004
  317.  2004
  318. Characteristics of reactive ion etching for zinc telluride 2003
  319. Effect of Cl ion implantation on electrical properties of CuInSe2 thin films 2003
  320. Effect of 8MeV electron irradiation on electrical properties of CuInSe2 thin films 2003
  321. Growth and optical properties of high-quality ZnTe homoepitaxial layers by metalorganic vapor phase epitaxy 2003
  322. Photoluminescence properties of ZnTe homoepitaxial layers grown by synchrotron-radiation-excited growth using nitrogen carrier gas 2003
  323. Fabrication of ZnTe Light-Emitting Diodes Using Bridgman-Grown Substrates 2003
  324. Photoluminescence of iodine-doped ZnTe homoepitaxial layer grown by metalorganic vapor phase epitaxy 2003
  325. Photoluminescence of Cl-doped ZnTe epitaxial layer grown by atmospheric pressure metalorganic vapor phase epitaxy 2003
  326. Synchrotron Radiation-Excited Etching of ZnTe 2003
  327. Depth dependence of photoluminescence spectra of Al thermal diffusion layer in ZnTe LED 2003
  328. Influence of Al thermal diffusion time on electroluminescence properties of ZnTe LED 2003
  329.  2003
  330. Growth properties of reactive sputtered AlInN films 2003
  331. Effect of iodine doping on photoluminescence properties of ZnTe grown by metalorganic vapor phase epitaxy 2002
  332. Photoluminescence spectra of arsenic-doped ZnTe films grown by metal organic vapor phase epitaxy (MOVPE) using triethylarsine 2002
  333.  2002
  334.  2002
  335.  2002
  336. MOVPE Growth and characterization of high quality ZnTe homoepitaxial layers 2002
  337. Photoluminescence properties of chlorine-doped ZnTe grown by metalorganic vapor phase epitaxy 2002
  338. Photoluminescence properties of ZnTe homoepitaxial films deposited by photo-excited growth using synchrotron-radiation light 2002
  339. Growth rate characteristics and photoluminescence properties of ZnTe grown by MOVPE and photo-assisted MOVPE 2001
  340. CuInSe2 and its related thin films prepared by rf sputtering and laser ablation methods 2001
  341. Effect of Substrate Position in i-ZnO Thin Film Formation to Cu(In,Ga)Se2 Solar Cell 2001
  342. Photoluminescence properties of iodine-doped ZnTe grown by metalorganic vapor phase epitaxy 2001
  343. Arsenic and Phosphor P-type Doping of Bulk ZnTe for LED Applications 2001
  344. Investigation into the influence of GaN buffer layer on crystallinity of InN 2001
  345. Growth of Arsenic-Doped ZnTe by MOVPE using Triethylarsine 2001
  346. Effect of Gas Flow Rate on Properties of ZnTe Epitaxial Layers Grown by Horizontal Metalorganic Vapor Phase Epitaxy 2001
  347. Heteroepitaxial Growth of GaN on (111)GaAs Substrates 2001
  348. Effect of 8MeV-electron irradiation on electrical properties of CuInSe2 thin films 2001
  349. Implantation of Chlorine ion into CuInSe2 thin films 2001
  350. Effect of electron irradiation on properties of CuInSe2 thin films 2000
  351. Effect of Mg ion implantation on electrical properties of CuInSe2 thin films 2000
  352. Irradiation effect of 8MeV-electron on electrical properties of CuInSe2 thin films 2000
  353. Effect of electron irradiation on properties of CuInSe2 thin films 2000
  354. Effect of substrate temperature on properties of thin films prepared by RF sputtering from CuInSe2 target with Na2Se 1999
  355. Mg ion implantation in CuInSe2 thin films 1999
  356. Characterization of Cu(In,Ga)2Se3.5 thin films prepared by rf sputtering from Cu(In,Ga)Se2 with Na2Se 1998
  357. Influence of incorporation of Na on CuInSe2 thin films 1998
  358. Preparation and characterization of (Cd,Zn)S thin films by chemical bath deposition for photovoltaic devices 1998
  359. Effect of substrate temperature on properties of thin films prepared by RF sputtering from CuInSe2 target with Na2Se 1998
  360. CHARACTERIZATION OF CuInSe2 THIN FILMS FABRICATED BY RF SPUTTERING WITH ALKALI METALS 1998
  361. Preparation of Cu(In,Ga)2Se3.5 Thin Films by RF Sputtering from stoichiometric Cu(In,Ga)Se2 target with Na2Se 1997
  362. Influence of incorporation of Na on CuInSe2 thin films 1997
  363. Preparation of ordered vacancy chalcopyrite thin films by RF sputtering from CuInSe2 target with Na2Se 1996
  364. Characterization of CuInS2 thin films prepared by sputtering from binary compounds 1996
  365. Preparation of CuInSe2 thin films with large grain by excimer laser ablation 1996
  366. Influence of annealing temperature on the properties of Cu(In,Ga)Se2 thin films by thermal crystallization in Se vapor 1996
  367. Characterization of Cu(In,Ga)2Se3.5 thin films prepared by rf sputtering from Cu(In,Ga)Se2 with Na2Se 1996
  368. (Cd,Zn)S THIN FILMS PREPARED BY CHEMICAL BATH DEPOSITION FOR PHOTOVOLTAIC DEVICES 1995
  369. FABRICATION AND CHARACTERIZATION OF CuIn(SxSe1-x)2 THIN FILMS BY RF SPUTTERING 1995
  370. Characterization of CuInSe2 thin films prepared by Excimer Laser Ablaton 1995
  371. Influence of precursor structure on the properties of Cu(In,Ga)Se2 thin fims by thermal crystallization 1995